Implanted p-n junctions in GaN

X. A. Cao, J. R. Laroche, F. Ren, S. J. Pearton, J. R. Lothian, R. K. Singh, R. G. Wilson, H. J. Guo, S. J. Pennycook

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16 Scopus citations


29Si+ ion implantation into GaN(Mg), followed by rapid thermal annealing at 1100°C was used to create n+/p junctions. The junction ideality factor was approx. 2, indicative of a high density of generation-recombination centers, and the breakdown voltage was 13 V at 5.1 × 10-4 A cm-2. Transmission electron microscopy revealed a high density (> 1010 cm-2) of implantation damage-related dislocations in the material, due to incomplete annealing of displaced lattice atoms. Higher annealing temperatures and improved junction passivation are needed for improved stand-off voltages.

Original languageEnglish
Pages (from-to)1235-1238
Number of pages4
JournalSolid-State Electronics
Issue number7
StatePublished - Jul 1999
Externally publishedYes


The work at UF is partially supported by a DARPA/EPRI grant (D. Radack and J. Melcher), No. MDA 972-98-1-0006, and by a NSF grant (L. Hess), No. DMR 97-32865.

FundersFunder number
DARPA/EPRIMDA 972-98-1-0006
National Science Foundation
University of Florida


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