Implanted p-n junctions in GaN

X. A. Cao, J. R. Laroche, F. Ren, S. J. Pearton, J. R. Lothian, R. K. Singh, R. G. Wilson, H. J. Guo, S. J. Pennycook

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

29Si+ ion implantation into GaN(Mg), followed by rapid thermal annealing at 1100°C was used to create n+/p junctions. The junction ideality factor was approx. 2, indicative of a high density of generation-recombination centers, and the breakdown voltage was 13 V at 5.1 × 10-4 A cm-2. Transmission electron microscopy revealed a high density (> 1010 cm-2) of implantation damage-related dislocations in the material, due to incomplete annealing of displaced lattice atoms. Higher annealing temperatures and improved junction passivation are needed for improved stand-off voltages.

Original languageEnglish
Pages (from-to)1235-1238
Number of pages4
JournalSolid-State Electronics
Volume43
Issue number7
DOIs
StatePublished - Jul 1999
Externally publishedYes

Funding

The work at UF is partially supported by a DARPA/EPRI grant (D. Radack and J. Melcher), No. MDA 972-98-1-0006, and by a NSF grant (L. Hess), No. DMR 97-32865.

FundersFunder number
DARPA/EPRIMDA 972-98-1-0006
National Science Foundation
University of Florida

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