Impact of electron injection on carrier transport and recombination in unintentionally doped GaN

Sushrut Modak; Leonid Chernyak; Minghan Xian; Fan Ren; Stephen J. Pearton; Sergey Khodorov; Igor Lubomirsky; Arie Ruzin; Zinovi Dashevsky

doi:10.1063/5.0017742

Impact of electron injection on carrier transport and recombination in unintentionally doped GaN

Sushrut Modak, Leonid Chernyak, Minghan Xian, Fan Ren, Stephen J. Pearton, Sergey Khodorov, Igor Lubomirsky, Arie Ruzin, Zinovi Dashevsky

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8 Scopus citations

Abstract

The impact of electron injection on minority carrier (hole) diffusion length and lifetime at variable temperatures was studied using electron beam-induced current, continuous, and time-resolved cathodoluminescence techniques. The hole diffusion length increased from 306 nm to 347 nm with an electron injection charge density up to 117.5 nC/μm3, corresponding to the lifetime changing from 77 ps to 101 ps. Elongation of the diffusion length was attributed to the increase in the non-equilibrium carrier lifetime, which was determined using ultrafast time-resolved cathodoluminescence and related to non-equilibrium carrier trapping on gallium vacancy levels in the GaN forbidden gap.

Original language	English
Article number	085702
Journal	Journal of Applied Physics
Volume	128
Issue number	8
DOIs	https://doi.org/10.1063/5.0017742
State	Published - 28 Aug 2020
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2020 Author(s).

Funding

Research at UCF and the Weizmann institute was supported in part by NATO (Award No. G5453) and National Science Foundation (NSF) (UCF Award No. ECCS1802208). Research at UCF and Tel Aviv University was supported in part by US-Israel BSF (No. 2018010). The work at UF was sponsored by the Department of Defense, Defense Threat Reduction Agency, No. HDTRA1-17-1-011, monitored by Jacob Calkins and also by NSF DMR (No. 1856662) (Tania Paskova).

Funders	Funder number
NSF DMR	1856662
US-Israel BSF	2018010
National Science Foundation	ECCS1802208
U.S. Department of Defense
Defense Threat Reduction Agency	HDTRA1-17-1-011
North Atlantic Treaty Organization	G5453
University of Central Florida
Tel Aviv University

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abstract = "The impact of electron injection on minority carrier (hole) diffusion length and lifetime at variable temperatures was studied using electron beam-induced current, continuous, and time-resolved cathodoluminescence techniques. The hole diffusion length increased from 306 nm to 347 nm with an electron injection charge density up to 117.5 nC/μm3, corresponding to the lifetime changing from 77 ps to 101 ps. Elongation of the diffusion length was attributed to the increase in the non-equilibrium carrier lifetime, which was determined using ultrafast time-resolved cathodoluminescence and related to non-equilibrium carrier trapping on gallium vacancy levels in the GaN forbidden gap.",

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AU - Pearton, Stephen J.

AU - Khodorov, Sergey

AU - Lubomirsky, Igor

AU - Ruzin, Arie

AU - Dashevsky, Zinovi

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Impact of electron injection on carrier transport and recombination in unintentionally doped GaN

Abstract

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