Impact of electron injection and temperature on minority carrier transport in alpha-irradiated ß-Ga2O3 Schottky rectifiers

Sushrut Modak; Leonid Chernyak; Sergey Khodorov; Igor Lubomirsky; Jiancheng Yang; Fan Ren; Stephen J. Pearton

doi:10.1149/2.0101907jss

Impact of electron injection and temperature on minority carrier transport in alpha-irradiated ß-Ga₂O₃ Schottky rectifiers

Sushrut Modak, Leonid Chernyak, Sergey Khodorov, Igor Lubomirsky, Jiancheng Yang, Fan Ren, Stephen J. Pearton

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The effect of electron injection on minority carrier transport in Si-doped β-Ga₂O₃ Schottky rectifiers with 18 MeV alpha particle exposure (fluences of 10¹²–10¹³ cm⁻²) was studied from room temperature to 120°C. Electron Beam-Induced Current technique in-situ in Scanning Electron Microscope was used to find the diffusion length of holes as a function of duration of electron injection and temperature for alpha-particle irradiated rectifiers and compared with non-irradiated reference devices. The activation energy for electron injection-induced effect on diffusion length for the alpha-particle irradiated sample was determined to be ∼ 49 meV as compared to ∼74 meV for the reference sample. The decrease in activation energy of the electron injection effect on diffusion length for irradiated sample is attributed to radiation-induced generation of additional shallow recombination centers closer to the conduction band edge.

Original language	English
Pages (from-to)	Q3050-Q3053
Journal	ECS Journal of Solid State Science and Technology
Volume	8
Issue number	7
DOIs	https://doi.org/10.1149/2.0101907jss
State	Published - 2019
Externally published	Yes

Bibliographical note

Publisher Copyright:
© The Author(s) 2019.

Funding

Research at UCF and the Weizmann institute was supported in part by NATO (award # G5453) and NSF (UCF award # ECCS1802208). The work at UF was sponsored by the Department of Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins.

Funders	Funder number
National Science Foundation	ECCS1802208, 1802208
U.S. Department of Defense
Defense Threat Reduction Agency	HDTRA1-17-1-011
North Atlantic Treaty Organization	G5453
University of Central Florida

Access to Document

10.1149/2.0101907jss

Cite this

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title = "Impact of electron injection and temperature on minority carrier transport in alpha-irradiated {\ss}-Ga2O3 Schottky rectifiers",

abstract = "The effect of electron injection on minority carrier transport in Si-doped β-Ga2O3 Schottky rectifiers with 18 MeV alpha particle exposure (fluences of 1012–1013 cm−2) was studied from room temperature to 120°C. Electron Beam-Induced Current technique in-situ in Scanning Electron Microscope was used to find the diffusion length of holes as a function of duration of electron injection and temperature for alpha-particle irradiated rectifiers and compared with non-irradiated reference devices. The activation energy for electron injection-induced effect on diffusion length for the alpha-particle irradiated sample was determined to be ∼ 49 meV as compared to ∼74 meV for the reference sample. The decrease in activation energy of the electron injection effect on diffusion length for irradiated sample is attributed to radiation-induced generation of additional shallow recombination centers closer to the conduction band edge.",

author = "Sushrut Modak and Leonid Chernyak and Sergey Khodorov and Igor Lubomirsky and Jiancheng Yang and Fan Ren and Pearton, {Stephen J.}",

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T1 - Impact of electron injection and temperature on minority carrier transport in alpha-irradiated ß-Ga2O3 Schottky rectifiers

AU - Modak, Sushrut

AU - Chernyak, Leonid

AU - Khodorov, Sergey

AU - Lubomirsky, Igor

AU - Yang, Jiancheng

AU - Ren, Fan

AU - Pearton, Stephen J.

PY - 2019

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AB - The effect of electron injection on minority carrier transport in Si-doped β-Ga2O3 Schottky rectifiers with 18 MeV alpha particle exposure (fluences of 1012–1013 cm−2) was studied from room temperature to 120°C. Electron Beam-Induced Current technique in-situ in Scanning Electron Microscope was used to find the diffusion length of holes as a function of duration of electron injection and temperature for alpha-particle irradiated rectifiers and compared with non-irradiated reference devices. The activation energy for electron injection-induced effect on diffusion length for the alpha-particle irradiated sample was determined to be ∼ 49 meV as compared to ∼74 meV for the reference sample. The decrease in activation energy of the electron injection effect on diffusion length for irradiated sample is attributed to radiation-induced generation of additional shallow recombination centers closer to the conduction band edge.

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