Abstract
Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined devices. Here we show that naturally occurring twin boundaries, with properties that are different from their surrounding bulk, can tune the LaAlO 3 /SrTiO 3 interface 2DEG at the nanoscale. In particular, SrTiO 3 domain boundaries have the unusual distinction of remaining highly mobile down to low temperatures, and were recently suggested to be polar. Here we apply localized pressure to an individual SrTiO3 twin boundary and detect a change in LaAlO3 /SrTiO3 interface current distribution. Our data directly confirm the existence of polarity at the twin boundaries, and demonstrate that they can serve as effective tunable gates. As the location of SrTiO3 domain walls can be controlled using external field stimuli, our findings suggest a novel approach to manipulate SrTiO3 -based devices on the nanoscale.
Original language | English |
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Pages (from-to) | 1203-1208 |
Number of pages | 6 |
Journal | Nature Materials |
Volume | 16 |
Issue number | 12 |
DOIs | |
State | Published - 1 Dec 2017 |
Bibliographical note
Publisher Copyright:© 2017 Macmillan Publishers Limited, part of Springer Nature. All rights reserved.
Funding
∼0.2 µm) proves that this is not a simple decay of our stress dome. Further support comes from the ability to resolve dense domains (down to 2 µm spacing). We suggest that the response area extends along the domain wall. This scenario is supported by the increase of ΔV signal with domain length (Fig. 2c).
Funders | Funder number |
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Office of Basic Energy Sciences | |
U.S. Department of Energy | |
Gordon and Betty Moore Foundation | GBMF4415 |
Horizon 2020 Framework Programme | 639792 |
Division of Materials Sciences and Engineering | DE-AC02–76SF00515 |
Engineering and Physical Sciences Research Council | EP/P024904/1 |
European Commission | |
Israel Science Foundation | ISF-1102/13, ISF-1281/17 |