Abstract
The evolution of III–V semiconductor detectors over the past 60 years has been dramatic, from the first InSb photodiodes to modern‐day molecular beam epitaxy (MBE)‐grown barrier detectors with a very high level of performance. Examples are given of recent state‐of‐the‐art InAsSb XBn_and InAs/GaSb XBp_detectors grown on GaSb. Emphasis is placed on the feedback between device design and simulation on the one hand, and electrical and optical characterization on the other, as the key to achieving full optimization of MBE growth and device fabrication.
| Original language | English |
|---|---|
| Title of host publication | Molecular Beam Epitaxy |
| Subtitle of host publication | Materials and Applications for Electronics and Optoelectronics |
| Publisher | wiley |
| Pages | 247-264 |
| Number of pages | 18 |
| ISBN (Electronic) | 9781119354987 |
| ISBN (Print) | 9781119355021 |
| DOIs | |
| State | Published - 1 Jan 2019 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2019 John Wiley & Sons Ltd. Published 2019 by John Wiley & Sons Ltd.