Iii–v semiconductors for infrared detectors

P. C. Klipstein

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

1 Scopus citations


The evolution of III–V semiconductor detectors over the past 60 years has been dramatic, from the first InSb photodiodes to modern‐day molecular beam epitaxy (MBE)‐grown barrier detectors with a very high level of performance. Examples are given of recent state‐of‐the‐art InAsSb XBn_and InAs/GaSb XBp_detectors grown on GaSb. Emphasis is placed on the feedback between device design and simulation on the one hand, and electrical and optical characterization on the other, as the key to achieving full optimization of MBE growth and device fabrication.

Original languageEnglish
Title of host publicationMolecular Beam Epitaxy
Subtitle of host publicationMaterials and Applications for Electronics and Optoelectronics
Number of pages18
ISBN (Electronic)9781119354987
ISBN (Print)9781119355021
StatePublished - 1 Jan 2019
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2019 John Wiley & Sons Ltd. Published 2019 by John Wiley & Sons Ltd.


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