III-V-Based gate-all-around cylindrical nanowire junctionless field effect transistor

This chapter represents some essential aspects of nanowires and their transport properties. Scaling of MOSFETs becomes a huge problem for industries due to short channel effects (SCEs) and sub-threshold leakage current. So, nanowires become a good solution to SCEs due to their structure. This chapter is divided into three parts. The first part gives a brief introduction of nanowire and different materials that can replace Si (channel material) and SiO2 (oxide material) due to their superior performance over Si. In the second part, the device structure and device structural measurement is discussed. In the third part, transport properties are discussed. This chapter shows the behavior of nanowire on changing different device materials and device dimensions. Electrical characteristics of Si and III-V based nanowires FETs will be analyzed and compared. High-k dielectric as oxide material also helps in improving device performance. HfO2 shows improvement in device characteristics over SiO2 taken as an oxide material. Junctionless nanowire MOSFET has also been designed and analyzed.