Identification of zone boundary and interface phonon recombinations in photoluminescence from type-II GaAs/AlAs short-period superlattices

T. Gilmour; P. C. Klipstein; W. R. Tribe; G. W. Smith

doi:10.1006/spmi.1996.0219

Identification of zone boundary and interface phonon recombinations in photoluminescence from type-II GaAs/AlAs short-period superlattices

T. Gilmour, P. C. Klipstein, W. R. Tribe, G. W. Smith

Research output: Contribution to journal › Article › peer-review

Abstract

We present the first identification of the direct participation of the GaAs interface (IF) mode in the phonon-assisted recombinations from type-II GaAs/AlAs short-period superlattices (SPSL). This is achieved by utilizing a novel first-order resonant Raman process associated with the type-II X_z-Γ band gap to enable a direct comparison, in the same sample, of zone boundary phonons with the photoluminescence (PL) phonon satellite energies. We present PL measurements on two complementary SPSLs to identify the reversal in the parity of the GaAs IF branch, where coupling is only allowed to the IF(+) branch. We also identify weak satellites, not previously reported, between the IF(+) and LA(X) satellites.

Original language	English
Pages (from-to)	1027-1032
Number of pages	6
Journal	Superlattices and Microstructures
Volume	23
Issue number	5
DOIs	https://doi.org/10.1006/spmi.1996.0219
State	Published - May 1998
Externally published	Yes

Bibliographical note

Funding Information:
Acknowledgements—This work was supported by the UK Engineering and Physical Sciences Research Council.

Funding

Acknowledgements—This work was supported by the UK Engineering and Physical Sciences Research Council.

Funders	Funder number
Engineering and Physical Sciences Research Council

Keywords

GaAs/AlAs superlattice
Interface phonon
Resonant Raman spectroscopy

Access to Document

10.1006/spmi.1996.0219

Cite this

@article{ea7231fbd2254bbfa03cb9a2ea68862d,

title = "Identification of zone boundary and interface phonon recombinations in photoluminescence from type-II GaAs/AlAs short-period superlattices",

abstract = "We present the first identification of the direct participation of the GaAs interface (IF) mode in the phonon-assisted recombinations from type-II GaAs/AlAs short-period superlattices (SPSL). This is achieved by utilizing a novel first-order resonant Raman process associated with the type-II Xz-Γ band gap to enable a direct comparison, in the same sample, of zone boundary phonons with the photoluminescence (PL) phonon satellite energies. We present PL measurements on two complementary SPSLs to identify the reversal in the parity of the GaAs IF branch, where coupling is only allowed to the IF(+) branch. We also identify weak satellites, not previously reported, between the IF(+) and LA(X) satellites.",

keywords = "GaAs/AlAs superlattice, Interface phonon, Resonant Raman spectroscopy",

author = "T. Gilmour and Klipstein, {P. C.} and Tribe, {W. R.} and Smith, {G. W.}",

note = "Funding Information: Acknowledgements—This work was supported by the UK Engineering and Physical Sciences Research Council.",

year = "1998",

month = may,

doi = "10.1006/spmi.1996.0219",

language = "אנגלית",

volume = "23",

pages = "1027--1032",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "5",

}

TY - JOUR

T1 - Identification of zone boundary and interface phonon recombinations in photoluminescence from type-II GaAs/AlAs short-period superlattices

AU - Gilmour, T.

AU - Klipstein, P. C.

AU - Tribe, W. R.

AU - Smith, G. W.

N1 - Funding Information: Acknowledgements—This work was supported by the UK Engineering and Physical Sciences Research Council.

PY - 1998/5

Y1 - 1998/5

N2 - We present the first identification of the direct participation of the GaAs interface (IF) mode in the phonon-assisted recombinations from type-II GaAs/AlAs short-period superlattices (SPSL). This is achieved by utilizing a novel first-order resonant Raman process associated with the type-II Xz-Γ band gap to enable a direct comparison, in the same sample, of zone boundary phonons with the photoluminescence (PL) phonon satellite energies. We present PL measurements on two complementary SPSLs to identify the reversal in the parity of the GaAs IF branch, where coupling is only allowed to the IF(+) branch. We also identify weak satellites, not previously reported, between the IF(+) and LA(X) satellites.

AB - We present the first identification of the direct participation of the GaAs interface (IF) mode in the phonon-assisted recombinations from type-II GaAs/AlAs short-period superlattices (SPSL). This is achieved by utilizing a novel first-order resonant Raman process associated with the type-II Xz-Γ band gap to enable a direct comparison, in the same sample, of zone boundary phonons with the photoluminescence (PL) phonon satellite energies. We present PL measurements on two complementary SPSLs to identify the reversal in the parity of the GaAs IF branch, where coupling is only allowed to the IF(+) branch. We also identify weak satellites, not previously reported, between the IF(+) and LA(X) satellites.

KW - GaAs/AlAs superlattice

KW - Interface phonon

KW - Resonant Raman spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=0031651765&partnerID=8YFLogxK

U2 - 10.1006/spmi.1996.0219

DO - 10.1006/spmi.1996.0219

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0031651765

SN - 0749-6036

VL - 23

SP - 1027

EP - 1032

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 5

ER -

Identification of zone boundary and interface phonon recombinations in photoluminescence from type-II GaAs/AlAs short-period superlattices

Abstract

Bibliographical note

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this