Hybrid Sensor Based on AlGaN/GaN Molecular Controlled Device

Meital Eckshtain-Levi, Eyal Capua, Yossi Paltiel, Ron Naaman

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


We developed and investigated the properties of molecularly controlled semiconductor resistors (MOCSERs) based on AlGaN/GaN structure. The response of the sensor for two different analytes was investigated when the sensor was coated with two molecules that differ only in their binding groups. We studied the ability to enhance the specificity of the sensor by adding illumination at various sub-bandgap frequencies. It was verified that the sensor is sensitive to the electronegativity of the analyte and illumination can affect the sensitivity and selectivity when the system does not reach a steady state. Hence, we differ between two operational modes in which orthogonal sensing is made.

Original languageEnglish
Pages (from-to)185-189
Number of pages5
JournalACS Sensors
Issue number2
StatePublished - 26 Feb 2016
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2015 American Chemical Society.


  • AlGaN/GaN
  • ammonia
  • formic acid
  • side gates
  • sub-bandgap excitation


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