Hybrid electrically pumped evanescent Si/InGaAsP lasers

Xiankai Sun, Avi Zadok, Michael J. Shearn, Kenneth A. Diest, Alireza Ghaffari, Harry A. Atwater, Axel Scherer, Amnon Yariv

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


Hybrid Si/InGaAsP Fabry-Perot evanescent lasers are fabricated via wafer bonding. Compared with previous similar devices, the current threshold density, turn-on voltage, output power and slope efficiency are all improved. Images show modal confinement to Silicon.

Original languageEnglish
Title of host publication2009 Conference on Optical Fiber Communication, OFC 2009
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781557528650
StatePublished - 1 Jan 2009
Externally publishedYes
Event2009 Conference on Optical Fiber Communication, OFC 2009 - San Diego, CA, United States
Duration: 22 Mar 200926 Mar 2009

Publication series

NameConference on Optical Fiber Communication, Technical Digest Series


Conference2009 Conference on Optical Fiber Communication, OFC 2009
Country/TerritoryUnited States
CitySan Diego, CA


  • (250.5300) Photonic integrated circuits
  • (250.5960) Semiconductor lasers


Dive into the research topics of 'Hybrid electrically pumped evanescent Si/InGaAsP lasers'. Together they form a unique fingerprint.

Cite this