Hybrid electrically pumped evanescent Si/InGaAsP lasers

Xiankai Sun; Avi Zadok; Michael J. Shearn; Kenneth A. Diest; Alireza Ghaffari; Harry A. Atwater; Axel Scherer; Amnon Yariv

doi:10.1364/ofc.2009.othn1

Hybrid electrically pumped evanescent Si/InGaAsP lasers

Xiankai Sun, Avi Zadok, Michael J. Shearn, Kenneth A. Diest, Alireza Ghaffari, Harry A. Atwater, Axel Scherer, Amnon Yariv

California Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Hybrid Si/InGaAsP Fabry-Perot evanescent lasers are fabricated via wafer bonding. Compared with previous similar devices, the current threshold density, turn-on voltage, output power and slope efficiency are all improved. Images show modal confinement to Silicon.

Original language	English
Title of host publication	2009 Conference on Optical Fiber Communication, OFC 2009
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781557528650
DOIs	https://doi.org/10.1364/ofc.2009.othn1
State	Published - 1 Jan 2009
Externally published	Yes
Event	2009 Conference on Optical Fiber Communication, OFC 2009 - San Diego, CA, United States Duration: 22 Mar 2009 → 26 Mar 2009

Publication series

Name	Conference on Optical Fiber Communication, Technical Digest Series

Conference

Conference	2009 Conference on Optical Fiber Communication, OFC 2009
Country/Territory	United States
City	San Diego, CA
Period	22/03/09 → 26/03/09

Keywords

(250.5300) Photonic integrated circuits
(250.5960) Semiconductor lasers

Access to Document

10.1364/ofc.2009.othn1

Cite this

Sun, X., Zadok, A., Shearn, M. J., Diest, K. A., Ghaffari, A., Atwater, H. A., Scherer, A., & Yariv, A. (2009). Hybrid electrically pumped evanescent Si/InGaAsP lasers. In 2009 Conference on Optical Fiber Communication, OFC 2009 Article 5032694 (Conference on Optical Fiber Communication, Technical Digest Series). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/ofc.2009.othn1

@inproceedings{e98365cc449f4b74ba52680cdacdbdc3,

title = "Hybrid electrically pumped evanescent Si/InGaAsP lasers",

abstract = "Hybrid Si/InGaAsP Fabry-Perot evanescent lasers are fabricated via wafer bonding. Compared with previous similar devices, the current threshold density, turn-on voltage, output power and slope efficiency are all improved. Images show modal confinement to Silicon.",

keywords = "(250.5300) Photonic integrated circuits, (250.5960) Semiconductor lasers",

author = "Xiankai Sun and Avi Zadok and Shearn, {Michael J.} and Diest, {Kenneth A.} and Alireza Ghaffari and Atwater, {Harry A.} and Axel Scherer and Amnon Yariv",

year = "2009",

month = jan,

day = "1",

doi = "10.1364/ofc.2009.othn1",

language = "אנגלית",

isbn = "9781557528650",

series = "Conference on Optical Fiber Communication, Technical Digest Series",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2009 Conference on Optical Fiber Communication, OFC 2009",

address = "ארצות הברית",

note = "2009 Conference on Optical Fiber Communication, OFC 2009 ; Conference date: 22-03-2009 Through 26-03-2009",

}

Sun, X, Zadok, A, Shearn, MJ, Diest, KA, Ghaffari, A, Atwater, HA, Scherer, A & Yariv, A 2009, Hybrid electrically pumped evanescent Si/InGaAsP lasers. in 2009 Conference on Optical Fiber Communication, OFC 2009., 5032694, Conference on Optical Fiber Communication, Technical Digest Series, Institute of Electrical and Electronics Engineers Inc., 2009 Conference on Optical Fiber Communication, OFC 2009, San Diego, CA, United States, 22/03/09. https://doi.org/10.1364/ofc.2009.othn1

Hybrid electrically pumped evanescent Si/InGaAsP lasers. / Sun, Xiankai; Zadok, Avi; Shearn, Michael J. et al.
2009 Conference on Optical Fiber Communication, OFC 2009. Institute of Electrical and Electronics Engineers Inc., 2009. 5032694 (Conference on Optical Fiber Communication, Technical Digest Series).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Hybrid electrically pumped evanescent Si/InGaAsP lasers

AU - Sun, Xiankai

AU - Zadok, Avi

AU - Shearn, Michael J.

AU - Diest, Kenneth A.

AU - Ghaffari, Alireza

AU - Atwater, Harry A.

AU - Scherer, Axel

AU - Yariv, Amnon

PY - 2009/1/1

Y1 - 2009/1/1

N2 - Hybrid Si/InGaAsP Fabry-Perot evanescent lasers are fabricated via wafer bonding. Compared with previous similar devices, the current threshold density, turn-on voltage, output power and slope efficiency are all improved. Images show modal confinement to Silicon.

AB - Hybrid Si/InGaAsP Fabry-Perot evanescent lasers are fabricated via wafer bonding. Compared with previous similar devices, the current threshold density, turn-on voltage, output power and slope efficiency are all improved. Images show modal confinement to Silicon.

KW - (250.5300) Photonic integrated circuits

KW - (250.5960) Semiconductor lasers

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AN - SCOPUS:84897049449

SN - 9781557528650

T3 - Conference on Optical Fiber Communication, Technical Digest Series

BT - 2009 Conference on Optical Fiber Communication, OFC 2009

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2009 Conference on Optical Fiber Communication, OFC 2009

Y2 - 22 March 2009 through 26 March 2009

ER -

Hybrid electrically pumped evanescent Si/InGaAsP lasers

Abstract

Publication series

Conference

Keywords

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