Hybrid, chemically passivated n-type silicon/PEDOT:PSS semiconductor- insulator-semiconductor solar cell

Rotem Har-Lavan; Pranav Joshi; Omer Yaffe; Igal Levine; David Cahen

doi:10.1109/pvsc.2011.6186452

Hybrid, chemically passivated n-type silicon/PEDOT:PSS semiconductor- insulator-semiconductor solar cell

Rotem Har-Lavan, Pranav Joshi, Omer Yaffe, Igal Levine, David Cahen

Weizmann Institute of Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We describe a hybrid inorganic-organic solar cell, wherein the n-Si absorber interface is chemically passivated and electrically contacted by a conductive polymer, PEDOT:PSS. In this structure, which is completely fabricated from its components at room temperature, the Si is type-inverted at the hybrid interface with the polymer, thus effectively creating an SIS type solar cell without any significant insulating film. For moderately doped Si, the surface is strongly inverted and photogenerated current is being collected from the entire area of the solar cell. The good lateral conduction of minority carriers in the inversion layer helps to mitigate a major limitation of PEDOT:PSS, viz. its high sheet resistance.

Original language	English
Title of host publication	Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages	2492-2496
Number of pages	5
DOIs	https://doi.org/10.1109/pvsc.2011.6186452
State	Published - 2011
Externally published	Yes
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 19 Jun 2011 → 24 Jun 2011

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	19/06/11 → 24/06/11

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10.1109/pvsc.2011.6186452

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Har-Lavan, R., Joshi, P., Yaffe, O., Levine, I., & Cahen, D. (2011). Hybrid, chemically passivated n-type silicon/PEDOT:PSS semiconductor- insulator-semiconductor solar cell. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 2492-2496). Article 6186452 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/pvsc.2011.6186452

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title = "Hybrid, chemically passivated n-type silicon/PEDOT:PSS semiconductor- insulator-semiconductor solar cell",

abstract = "We describe a hybrid inorganic-organic solar cell, wherein the n-Si absorber interface is chemically passivated and electrically contacted by a conductive polymer, PEDOT:PSS. In this structure, which is completely fabricated from its components at room temperature, the Si is type-inverted at the hybrid interface with the polymer, thus effectively creating an SIS type solar cell without any significant insulating film. For moderately doped Si, the surface is strongly inverted and photogenerated current is being collected from the entire area of the solar cell. The good lateral conduction of minority carriers in the inversion layer helps to mitigate a major limitation of PEDOT:PSS, viz. its high sheet resistance.",

author = "Rotem Har-Lavan and Pranav Joshi and Omer Yaffe and Igal Levine and David Cahen",

year = "2011",

doi = "10.1109/pvsc.2011.6186452",

language = "אנגלית",

isbn = "9781424499656",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "2492--2496",

booktitle = "Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011",

note = "37th IEEE Photovoltaic Specialists Conference, PVSC 2011 ; Conference date: 19-06-2011 Through 24-06-2011",

}

Har-Lavan, R, Joshi, P, Yaffe, O, Levine, I & Cahen, D 2011, Hybrid, chemically passivated n-type silicon/PEDOT:PSS semiconductor- insulator-semiconductor solar cell. in Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011., 6186452, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2492-2496, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 19/06/11. https://doi.org/10.1109/pvsc.2011.6186452

Hybrid, chemically passivated n-type silicon/PEDOT:PSS semiconductor- insulator-semiconductor solar cell. / Har-Lavan, Rotem; Joshi, Pranav; Yaffe, Omer et al.
Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 2492-2496 6186452 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - We describe a hybrid inorganic-organic solar cell, wherein the n-Si absorber interface is chemically passivated and electrically contacted by a conductive polymer, PEDOT:PSS. In this structure, which is completely fabricated from its components at room temperature, the Si is type-inverted at the hybrid interface with the polymer, thus effectively creating an SIS type solar cell without any significant insulating film. For moderately doped Si, the surface is strongly inverted and photogenerated current is being collected from the entire area of the solar cell. The good lateral conduction of minority carriers in the inversion layer helps to mitigate a major limitation of PEDOT:PSS, viz. its high sheet resistance.

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Hybrid, chemically passivated n-type silicon/PEDOT:PSS semiconductor- insulator-semiconductor solar cell

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