Hopping spectroscopy in doped germanium near the metal-insulator transition

I. Shlimak; M. Kaveh; M. J. Lea; P. Fozooni; P. Stefanyi; A. N. Ionov

doi:10.1016/0378-4371(93)90550-n

Hopping spectroscopy in doped germanium near the metal-insulator transition

I. Shlimak, M. Kaveh, M. J. Lea, P. Fozooni, P. Stefanyi, A. N. Ionov

Department of Physics - at Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The density of states (DOS) in the vicinity of the Fermi level controls all transport phenomena at low temperatures near the metal-insulator transition (MIT). The well-known method for DOS-determination on the metallic side of the MIT, the so-called "tunneling spectroscopy", is inapplicable on the insulating side because of the high sample resistance at low temperatures. In this work a new method for DOS-determination on the insulating side is presented. The method is based on the measurements of variable range hopping (VRH) resistance in magnetic fields. By analogy this method can be called "hopping spectroscopy".

Original language	English
Pages (from-to)	483-490
Number of pages	8
Journal	Physica A: Statistical Mechanics and its Applications
Volume	200
Issue number	1-4
DOIs	https://doi.org/10.1016/0378-4371(93)90550-n
State	Published - 15 Nov 1993

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title = "Hopping spectroscopy in doped germanium near the metal-insulator transition",

abstract = "The density of states (DOS) in the vicinity of the Fermi level controls all transport phenomena at low temperatures near the metal-insulator transition (MIT). The well-known method for DOS-determination on the metallic side of the MIT, the so-called {"}tunneling spectroscopy{"}, is inapplicable on the insulating side because of the high sample resistance at low temperatures. In this work a new method for DOS-determination on the insulating side is presented. The method is based on the measurements of variable range hopping (VRH) resistance in magnetic fields. By analogy this method can be called {"}hopping spectroscopy{"}.",

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T1 - Hopping spectroscopy in doped germanium near the metal-insulator transition

AU - Shlimak, I.

AU - Kaveh, M.

AU - Lea, M. J.

AU - Fozooni, P.

AU - Stefanyi, P.

AU - Ionov, A. N.

PY - 1993/11/15

Y1 - 1993/11/15

N2 - The density of states (DOS) in the vicinity of the Fermi level controls all transport phenomena at low temperatures near the metal-insulator transition (MIT). The well-known method for DOS-determination on the metallic side of the MIT, the so-called "tunneling spectroscopy", is inapplicable on the insulating side because of the high sample resistance at low temperatures. In this work a new method for DOS-determination on the insulating side is presented. The method is based on the measurements of variable range hopping (VRH) resistance in magnetic fields. By analogy this method can be called "hopping spectroscopy".

AB - The density of states (DOS) in the vicinity of the Fermi level controls all transport phenomena at low temperatures near the metal-insulator transition (MIT). The well-known method for DOS-determination on the metallic side of the MIT, the so-called "tunneling spectroscopy", is inapplicable on the insulating side because of the high sample resistance at low temperatures. In this work a new method for DOS-determination on the insulating side is presented. The method is based on the measurements of variable range hopping (VRH) resistance in magnetic fields. By analogy this method can be called "hopping spectroscopy".

UR - https://www.scopus.com/pages/publications/26844461021

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JO - Physica A: Statistical Mechanics and its Applications

JF - Physica A: Statistical Mechanics and its Applications

IS - 1-4

ER -

Hopping spectroscopy in doped germanium near the metal-insulator transition

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