1 f hopping noise in crystalline germanium

I. Shlimak, Y. Kraftmakher, R. Ussyshkin, K. Zilberberg

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


The low-frequency current noise (f = 0.1-50 Hz) has been measured in samples of p-Ge〈Ga〉 and n-Ge〈As〉 at temperatures 1.3-4.2 K, where the d.c. conductivity is determined by the nearest-neighbour-hopping mechanism of charge transport. It is shown that the spectral density of the noise has a 1 f-form and is proportional to the square of the applied voltage in accordance with the Hooge formula. However, the temperature dependence of the noise is much weaker than that of the d.c. resistivity, which is controlled by the concentration of mobile carriers in the critical network. Possible explanations of this effect are discussed.

Original languageEnglish
Pages (from-to)829-832
Number of pages4
JournalSolid State Communications
Issue number10
StatePublished - Mar 1995


  • A. semiconductors
  • D. electronic transport
  • D. noise
  • D. tunnelling


Dive into the research topics of '1 f hopping noise in crystalline germanium'. Together they form a unique fingerprint.

Cite this