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Hopping magnetoresistance in a single 2D layer in parallel magnetic fields
S. I. Khondaker
, M. Pepper
, D. A. Ritchie
, I. Shlimak
Department of Physics - at Bar-Ilan University
University of Cambridge
Research output
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Keyphrases
Magnetoresistance
100%
Variable Range Hopping
100%
Parallel Magnetic Field
100%
2D Layer
100%
Heterostructure
50%
GaAs-AlGaAs
50%
Positive Magnetoresistance
50%
Hopping Mechanism
50%
Occupied State
50%
Delta Doping
50%
State Correlations
50%
Hubbard Bands
50%
Intrastate
50%
Engineering
Range Variable
100%
Magnetic Field
100%
Aluminium Gallium Arsenide
50%
Positive Magnetoresistance
50%
Doped Gaas
50%
Heterojunctions
50%
Material Science
Magnetoresistance
100%
Heterojunction
50%
Gallium Arsenide
50%
Aluminium Gallium Arsenide
50%