Hopping magnetoresistance in a single 2D layer in parallel magnetic fields

S. I. Khondaker; M. Pepper; D. A. Ritchie; I. Shlimak

doi:10.1002/(sici)1521-3951(200003)218:1<181::aid-pssb181>3.0.co;2-%23

Hopping magnetoresistance in a single 2D layer in parallel magnetic fields

S. I. Khondaker
, M. Pepper
, D. A. Ritchie
, I. Shlimak

Department of Physics - at Bar-Ilan University

University of Cambridge

Research output: Contribution to journal › Article › peer-review

Abstract

Large positive magnetoresistance has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. This implies that spins play an important role in 2D VRH conductivity. A possible explanation involves hopping via double occupied states in the upper Hubbard band, where the intra-state correlation of spins is important.

Original language	English
Pages (from-to)	181-183
Number of pages	3
Journal	Physica Status Solidi (B): Basic Research
Volume	218
Issue number	1
DOIs	https://doi.org/10.1002/(sici)1521-3951(200003)218:1<181::aid-pssb181>3.0.co;2-%23
State	Published - Mar 2000

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abstract = "Large positive magnetoresistance has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. This implies that spins play an important role in 2D VRH conductivity. A possible explanation involves hopping via double occupied states in the upper Hubbard band, where the intra-state correlation of spins is important.",

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AB - Large positive magnetoresistance has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. This implies that spins play an important role in 2D VRH conductivity. A possible explanation involves hopping via double occupied states in the upper Hubbard band, where the intra-state correlation of spins is important.

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Hopping magnetoresistance in a single 2D layer in parallel magnetic fields

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