Large positive magnetoresistance has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. This implies that spins play an important role in 2D VRH conductivity. A possible explanation involves hopping via double occupied states in the upper Hubbard band, where the intra-state correlation of spins is important.
|Number of pages||3|
|Journal||Physica Status Solidi (B): Basic Research|
|State||Published - Mar 2000|