Hopping magnetoresistance in a single 2D layer in parallel magnetic fields

S. I. Khondaker; M. Pepper; D. A. Ritchie; I. Shlimak

doi:10.1002/(sici)1521-3951(200003)218:1<181::aid-pssb181>3.0.co;2-%23

Hopping magnetoresistance in a single 2D layer in parallel magnetic fields

S. I. Khondaker, M. Pepper, D. A. Ritchie, I. Shlimak

Department of Physics

University of Cambridge

Research output: Contribution to journal › Article › peer-review

Abstract

Large positive magnetoresistance has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. This implies that spins play an important role in 2D VRH conductivity. A possible explanation involves hopping via double occupied states in the upper Hubbard band, where the intra-state correlation of spins is important.

Original language	English
Pages (from-to)	181-183
Number of pages	3
Journal	Physica Status Solidi (B): Basic Research
Volume	218
Issue number	1
DOIs	https://doi.org/10.1002/(sici)1521-3951(200003)218:1<181::aid-pssb181>3.0.co;2-%23
State	Published - Mar 2000

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@article{836f29cba34446c49811cee4fb9f61af,

title = "Hopping magnetoresistance in a single 2D layer in parallel magnetic fields",

abstract = "Large positive magnetoresistance has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. This implies that spins play an important role in 2D VRH conductivity. A possible explanation involves hopping via double occupied states in the upper Hubbard band, where the intra-state correlation of spins is important.",

author = "Khondaker, {S. I.} and M. Pepper and Ritchie, {D. A.} and I. Shlimak",

year = "2000",

month = mar,

doi = "10.1002/(sici)1521-3951(200003)218:1<181::aid-pssb181>3.0.co;2-%23",

language = "אנגלית",

volume = "218",

pages = "181--183",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc.",

number = "1",

}

TY - JOUR

T1 - Hopping magnetoresistance in a single 2D layer in parallel magnetic fields

AU - Khondaker, S. I.

AU - Pepper, M.

AU - Ritchie, D. A.

AU - Shlimak, I.

PY - 2000/3

Y1 - 2000/3

N2 - Large positive magnetoresistance has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. This implies that spins play an important role in 2D VRH conductivity. A possible explanation involves hopping via double occupied states in the upper Hubbard band, where the intra-state correlation of spins is important.

AB - Large positive magnetoresistance has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. This implies that spins play an important role in 2D VRH conductivity. A possible explanation involves hopping via double occupied states in the upper Hubbard band, where the intra-state correlation of spins is important.

UR - http://www.scopus.com/inward/record.url?scp=0034340623&partnerID=8YFLogxK

U2 - 10.1002/(sici)1521-3951(200003)218:1<181::aid-pssb181>3.0.co;2-%23

DO - 10.1002/(sici)1521-3951(200003)218:1<181::aid-pssb181>3.0.co;2-%23

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0034340623

SN - 0370-1972

VL - 218

SP - 181

EP - 183

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

IS - 1

ER -

Hopping magnetoresistance in a single 2D layer in parallel magnetic fields

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