Hopping conductivity in gated δ-doped GaAs: universality of prefactor

I. Shlimak; K. J. Friedland; S. D. Baranovskii

doi:10.1016/s0038-1098(99)00286-0

Hopping conductivity in gated δ-doped GaAs: universality of prefactor

I. Shlimak, K. J. Friedland, S. D. Baranovskii

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Abstract

A new interpretation is presented of the low-temperature variable-range-hopping (VRH) conductivity of a gated δ-doped GaAs sample. It is shown that the temperature dependence of the longitudinal resistivity ρ_xx is described by the Efros-Shklovskii law: ρ(T) = ρ₀ expt[(T₀/T)^1/2] with the universal prefactor ρ₀ = (h/e²). This may be considered as experimental evidence for phonon-less hopping which is assisted by the electron-electron interaction (EEI). The result suggests that the EEI mechanism dominates in the case of δ-doping, where charged impurities are situated directly in the two-dimensional conducting layer.

Original language	English
Pages (from-to)	21-24
Number of pages	4
Journal	Solid State Communications
Volume	112
Issue number	1
DOIs	https://doi.org/10.1016/s0038-1098(99)00286-0
State	Published - 31 Aug 1999
Externally published	Yes

Bibliographical note

Funding Information:
We thank L. Resnik and D.M. Shvarts for assistance. We also gratefully acknowledge financial support of the Erik and Sheila Samson Chair of Semiconductor Technology, of the Deutsche Forschungsgemeinschaft via SFB 383, and of the Fonds der Chemischen Industrie.

Funding

We thank L. Resnik and D.M. Shvarts for assistance. We also gratefully acknowledge financial support of the Erik and Sheila Samson Chair of Semiconductor Technology, of the Deutsche Forschungsgemeinschaft via SFB 383, and of the Fonds der Chemischen Industrie.

Funders	Funder number
Verband der Chemischen Industrie
Deutsche Forschungsgemeinschaft	SFB 383

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10.1016/s0038-1098(99)00286-0

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@article{7628e177983241ac9ac82ccd990e9f65,

title = "Hopping conductivity in gated δ-doped GaAs: universality of prefactor",

abstract = "A new interpretation is presented of the low-temperature variable-range-hopping (VRH) conductivity of a gated δ-doped GaAs sample. It is shown that the temperature dependence of the longitudinal resistivity ρxx is described by the Efros-Shklovskii law: ρ(T) = ρ0 expt[(T0/T) 1/2 ] with the universal prefactor ρ0 = (h/e2). This may be considered as experimental evidence for phonon-less hopping which is assisted by the electron-electron interaction (EEI). The result suggests that the EEI mechanism dominates in the case of δ-doping, where charged impurities are situated directly in the two-dimensional conducting layer.",

author = "I. Shlimak and Friedland, {K. J.} and Baranovskii, {S. D.}",

note = "Funding Information: We thank L. Resnik and D.M. Shvarts for assistance. We also gratefully acknowledge financial support of the Erik and Sheila Samson Chair of Semiconductor Technology, of the Deutsche Forschungsgemeinschaft via SFB 383, and of the Fonds der Chemischen Industrie. ",

year = "1999",

month = aug,

day = "31",

doi = "10.1016/s0038-1098(99)00286-0",

language = "אנגלית",

volume = "112",

pages = "21--24",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "1",

}

TY - JOUR

T1 - Hopping conductivity in gated δ-doped GaAs

T2 - universality of prefactor

AU - Shlimak, I.

AU - Friedland, K. J.

AU - Baranovskii, S. D.

N1 - Funding Information: We thank L. Resnik and D.M. Shvarts for assistance. We also gratefully acknowledge financial support of the Erik and Sheila Samson Chair of Semiconductor Technology, of the Deutsche Forschungsgemeinschaft via SFB 383, and of the Fonds der Chemischen Industrie.

PY - 1999/8/31

Y1 - 1999/8/31

N2 - A new interpretation is presented of the low-temperature variable-range-hopping (VRH) conductivity of a gated δ-doped GaAs sample. It is shown that the temperature dependence of the longitudinal resistivity ρxx is described by the Efros-Shklovskii law: ρ(T) = ρ0 expt[(T0/T) 1/2 ] with the universal prefactor ρ0 = (h/e2). This may be considered as experimental evidence for phonon-less hopping which is assisted by the electron-electron interaction (EEI). The result suggests that the EEI mechanism dominates in the case of δ-doping, where charged impurities are situated directly in the two-dimensional conducting layer.

AB - A new interpretation is presented of the low-temperature variable-range-hopping (VRH) conductivity of a gated δ-doped GaAs sample. It is shown that the temperature dependence of the longitudinal resistivity ρxx is described by the Efros-Shklovskii law: ρ(T) = ρ0 expt[(T0/T) 1/2 ] with the universal prefactor ρ0 = (h/e2). This may be considered as experimental evidence for phonon-less hopping which is assisted by the electron-electron interaction (EEI). The result suggests that the EEI mechanism dominates in the case of δ-doping, where charged impurities are situated directly in the two-dimensional conducting layer.

UR - http://www.scopus.com/inward/record.url?scp=0032592870&partnerID=8YFLogxK

U2 - 10.1016/s0038-1098(99)00286-0

DO - 10.1016/s0038-1098(99)00286-0

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0032592870

SN - 0038-1098

VL - 112

SP - 21

EP - 24

JO - Solid State Communications

JF - Solid State Communications

IS - 1

ER -

Hopping conductivity in gated δ-doped GaAs: universality of prefactor

Abstract

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