Highly resistive p-PbTe films with carrier concentration as low as 10 14 cm-3

V. Sandomirsky; A. V. Butenko; I. G. Kolobov; A. Ronen; Y. Schlesinger; A. Yu Sipatov; V. V. Volubuev

doi:10.1063/1.1728319

Highly resistive p-PbTe films with carrier concentration as low as 10 ¹⁴ cm^-3

V. Sandomirsky, A. V. Butenko, I. G. Kolobov, A. Ronen, Y. Schlesinger, A. Yu Sipatov, V. V. Volubuev

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A model which showed that a high density of semiconductor-insulator interface states could deplete the entire film volume, if the film thickness was the order of Debye sceening length was presented. It was shown that such a situation could be realized when the interface between the semiconductor film and the substrate had a high concentration of trapping sites. It was shown that thin p-PbTe films, thermally deposited on mica substrate, had a low concentration of free holes, that resulted in a very high value of resistance. It was shown that such low concentration of free carriers allowed investigations to be one on a whole series of phenomena in A^IVB^VI semiconductors.

Original language	English
Pages (from-to)	3732-3734
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	19
DOIs	https://doi.org/10.1063/1.1728319
State	Published - 10 May 2004

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abstract = "A model which showed that a high density of semiconductor-insulator interface states could deplete the entire film volume, if the film thickness was the order of Debye sceening length was presented. It was shown that such a situation could be realized when the interface between the semiconductor film and the substrate had a high concentration of trapping sites. It was shown that thin p-PbTe films, thermally deposited on mica substrate, had a low concentration of free holes, that resulted in a very high value of resistance. It was shown that such low concentration of free carriers allowed investigations to be one on a whole series of phenomena in AIVBVI semiconductors.",

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AU - Ronen, A.

AU - Schlesinger, Y.

AU - Sipatov, A. Yu

AU - Volubuev, V. V.

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Highly resistive p-PbTe films with carrier concentration as low as 10 ¹⁴ cm^-3

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