Highly conducting indium tin oxide films grown by ultraviolet-assisted pulsed laser deposition at low temperatures

Keyphrases

• Bulk Chemical Composition 50%
• Carrier Mobility 50%
• Cm(III) 50%
• Corning Glass 50%
• Crystallinity 50%
• Crystallization 50%
• Defected Ground Structure 50%
• Diffraction Peak 50%
• Ellipsometry Measurement 50%
• Film Surface 50%
• High Transparency 50%
• Highly Conducting 100%
• Indium Tin Oxide Film 100%
• Low Temperature 100%
• Pulsed Laser Deposition 100%
• Spectroscopic Ellipsometry 50%
• Spectroscopy Investigation 50%
• Substrate Temperature 100%
• Surface Roughness 50%
• Surface Zone 50%
• Two-layer Structure 50%
• Ultraviolet-assisted 100%
• X Ray Diffraction 50%
• X-ray Photoelectron Spectroscopy 50%
• X-ray Reflectivity 50%

Engineering

• Bulk Chemical 33%
• Carrier Mobility 33%
• Crystallinity 33%
• Deposited Film 100%
• Film Surface 33%
• Indium-Tin-Oxide 100%
• Layer Structure 33%
• Low-Temperature 100%
• Oxide Film 100%
• Pulsed Laser 100%
• Ray Diffraction 33%
• Ray Photoelectron Spectroscopy 33%
• Substrate Temperature 66%
• Surface Region 33%

Material Science

• Amorphous Material 20%
• Carrier Mobility 20%
• Density 20%
• Film 100%
• Indium Tin Oxide 100%
• Oxide Film 100%
• Pulsed Laser Deposition 100%
• Reflectivity 20%
• Surface Roughness 20%
• X-Ray Diffraction 20%
• X-Ray Photoelectron Spectroscopy 20%