Abstract
Indium tin oxide films grown by conventional and ultraviolet-assisted pulsed laser deposition technique (PLD and UVPLD) on Si and Corning glass were analyzed by grazing and symmetric incidence X-ray diffraction. Films deposited at substrate temperatures up to 70 °C were amorphous, while films deposited at temperatures of 120 °C and higher showed good crystallinity, with a (222) texture. The diffraction peaks were split indicating that the films contained a two-layer structure. X-ray reflectivity studies showed that the film surface roughness was below 0.5 nm and their density approximately 7.20 g/cm 3. Spectroscopic ellipsometry measurements indicated that the films were highly transparent, while X-ray photoelectron spectroscopy investigations showed homogeneous bulk chemical composition and a very small Sn enrichment in the surface region. The carrier mobility was rather high for films deposited at 40 and 70 °C and then decreased with the increase of the substrate temperature, because the onset of crystallization at such low temperatures produces a defective structure.
| Original language | English |
|---|---|
| Pages (from-to) | 256-261 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 453-454 |
| DOIs | |
| State | Published - 1 Apr 2004 |
| Externally published | Yes |
| Event | Proceedings of Symposium H on Photonic Processing of Surfaces - Strasbourg, France Duration: 10 Jun 2003 → 13 Jun 2003 |
Keywords
- Indium tin oxide
- Laser ablation
- Transparent and conductive oxides
- Ultraviolet