High Temperature Ohmic Contact Metallizations for n-type 3C-SiC Sensors

J. Shor; R. A Weber; L. G Provost; D Goldstein; A. D Kurtz

High Temperature Ohmic Contact Metallizations for n-type 3C-SiC Sensors

J. Shor, R. A Weber, L. G Provost, D Goldstein, A. D Kurtz

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Several high temperature metallization systems, based on Ti and W ohmic contacts have been examined for n‐typeFormula . Contact resistivities of ≈10−4 Ω‐cm2 were measured on as deposited films. The Formula metallizations exhibited limited deterioration in the electrical properties after 20 h at 650°C in air. These contacts have the potential for utilization in short‐lifetime devices in the temperature range of 600 to 700°C and for long‐term operation at temperatures of 400 to 500°C.

Original language	American English
Title of host publication	in Wide Band-Gap Semiconductors proceedings of the Fall, 1991 Materials Research Society Conference
State	Published - 1994

Bibliographical note

Place of conference:USA

Cite this

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title = "High Temperature Ohmic Contact Metallizations for n-type 3C-SiC Sensors",

abstract = "Several high temperature metallization systems, based on Ti and W ohmic contacts have been examined for n‐typeFormula . Contact resistivities of ≈10−4 Ω‐cm2 were measured on as deposited films. The Formula metallizations exhibited limited deterioration in the electrical properties after 20 h at 650°C in air. These contacts have the potential for utilization in short‐lifetime devices in the temperature range of 600 to 700°C and for long‐term operation at temperatures of 400 to 500°C.",

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AU - Shor, J.

AU - Weber, R. A

AU - Provost, L. G

AU - Goldstein, D

AU - Kurtz, A. D

N1 - Place of conference:USA

PY - 1994

Y1 - 1994

N2 - Several high temperature metallization systems, based on Ti and W ohmic contacts have been examined for n‐typeFormula . Contact resistivities of ≈10−4 Ω‐cm2 were measured on as deposited films. The Formula metallizations exhibited limited deterioration in the electrical properties after 20 h at 650°C in air. These contacts have the potential for utilization in short‐lifetime devices in the temperature range of 600 to 700°C and for long‐term operation at temperatures of 400 to 500°C.

AB - Several high temperature metallization systems, based on Ti and W ohmic contacts have been examined for n‐typeFormula . Contact resistivities of ≈10−4 Ω‐cm2 were measured on as deposited films. The Formula metallizations exhibited limited deterioration in the electrical properties after 20 h at 650°C in air. These contacts have the potential for utilization in short‐lifetime devices in the temperature range of 600 to 700°C and for long‐term operation at temperatures of 400 to 500°C.

UR - https://scholar.google.co.il/scholar?q=High+Temperature+Ohmic+Contact+Metallizations+for+n-type+3C-SiC+Sensors&btnG=&hl=en&as_sdt=0%2C5

M3 - Conference contribution

BT - in Wide Band-Gap Semiconductors proceedings of the Fall, 1991 Materials Research Society Conference

ER -

High Temperature Ohmic Contact Metallizations for n-type 3C-SiC Sensors

Abstract

Bibliographical note

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