High Temperature Ohmic Contact Metallizations for n-Type 3C-SiC

Joseph S. Shor, Richard A. Weber, L. G. Provost, David Goldstein, Anthony D. Kurtz

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Several high temperature metallization systems, based on Ti and W ohmic contacts have been examined for n-type (β-SiC. Contact resistivities of ~10-4 Ω-cm2 were measured on as deposited films. The Ti/TiN/Pt/Au metallizations exhibited limited deterioration in the electrical properties after 20 h at 650°C in air. These contacts have the potential for utilization in short-lifetime devices in the temperature range of 600 to 700°C and for long-term operation at temperatures of 400 to 500°C.

Original languageEnglish
Pages (from-to)579-581
Number of pages3
JournalJournal of the Electrochemical Society
Volume141
Issue number2
DOIs
StatePublished - Feb 1994
Externally publishedYes

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