Abstract
Several high temperature metallization systems, based on Ti and W ohmic contacts have been examined for n-type (β-SiC. Contact resistivities of ~10-4 Ω-cm2 were measured on as deposited films. The Ti/TiN/Pt/Au metallizations exhibited limited deterioration in the electrical properties after 20 h at 650°C in air. These contacts have the potential for utilization in short-lifetime devices in the temperature range of 600 to 700°C and for long-term operation at temperatures of 400 to 500°C.
Original language | English |
---|---|
Pages (from-to) | 579-581 |
Number of pages | 3 |
Journal | Journal of the Electrochemical Society |
Volume | 141 |
Issue number | 2 |
DOIs | |
State | Published - Feb 1994 |
Externally published | Yes |