High temperature coefficient of resistance achieved by ion beam assisted sputtering with no heat treatment in V_yM_1-yO_x (M = Nb, Hf)

Keyphrases

• Heat Treatment 100%
• Temperature Coefficient of Resistance 100%
• High Temperature 100%
• Ion Beam Assisted 100%
• Room Temperature 60%
• Resistance Coefficient 20%
• Silica 20%
• Enhanced Sensitivity 20%
• Magnetron Co-sputtering 20%
• M-ratio 20%
• Plasma Sources 20%
• Bolometer 20%
• Growing Markets 20%
• Thermal Imaging 20%
• Resistance Properties 20%
• Oxygen Partial Pressure 20%
• Film Density 20%
• Fabrication Route 20%
• Annealing 20%
• Common Processes 20%
• Low-energy Ions 20%
• Si (100) Substrate 20%
• Ion Source 20%
• Deposition Parameters 20%
• Active Materials 20%
• Ion Beam Assisted Deposition 20%
• Room Temperature Deposition 20%
• Uncooled Microbolometer 20%
• Oxygen Species 20%
• Deposition Methods 20%
• K(I) 20%

Engineering

• Temperature Coefficient 100%
• Heat Treatment 100%
• Room Temperature 100%
• Deposition Method 25%
• Deposition Parameter 25%
• Plasma Source 25%
• Film Density 25%
• Magnetron 25%
• Temperature Coefficient of the Resistance 25%
• Oxygen Partial Pressure 25%
• Oxygen Specie 25%
• Assisted Deposition 25%
• Resistance Property 25%
• Active Material 25%
• Thin Films 25%
• Ion Source 25%

Material Science

• Film 100%
• Heat Treatment 100%
• Density 50%
• Ion Beam Assisted Deposition 50%
• Annealing 50%
• Thin Films 50%