High responsivity InGaAsSb p-n photodetector for extended SWIR detection

I. Shafir; N. Snapi; D. Cohen-Elias; A. Glozman; O. Klin; E. Weiss; O. Westreich; N. Sicron; M. Katz

doi:10.1063/5.0037192

High responsivity InGaAsSb p-n photodetector for extended SWIR detection

I. Shafir
, N. Snapi
, D. Cohen-Elias
, A. Glozman
, O. Klin
, E. Weiss
, O. Westreich
, N. Sicron
, M. Katz

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

A molecular beam epitaxy-grown InGaAsSb p-n photodetector lattice matched to GaSb for extended short wave infrared is reported. Electrical and optical characteristics were analyzed at temperatures from 200 K to room temperature. The photodetectors exhibit dark current densities of 2.9 × 10-6 A/cm2 at 200 K and 4.6 mA/cm2 at 300 K (-0.1 V bias) and a high quantum efficiency of 73% at room temperature under front side illumination. High detectivity (D*) values of 2.2 × 1010 cm·Hz1/2 W-1 and 7.4 × 1011 cm·Hz1/2 W-1 were observed at 200 K and room temperature, respectively.

Original language	English
Article number	063503
Journal	Applied Physics Letters
Volume	118
Issue number	6
DOIs	https://doi.org/10.1063/5.0037192
State	Published - 8 Feb 2021
Externally published	Yes

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© 2021 Author(s).

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10.1063/5.0037192

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@article{4c64c89c4b4d4a698458c5e852347ff3,

title = "High responsivity InGaAsSb p-n photodetector for extended SWIR detection",

abstract = "A molecular beam epitaxy-grown InGaAsSb p-n photodetector lattice matched to GaSb for extended short wave infrared is reported. Electrical and optical characteristics were analyzed at temperatures from 200 K to room temperature. The photodetectors exhibit dark current densities of 2.9 × 10-6 A/cm2 at 200 K and 4.6 mA/cm2 at 300 K (-0.1 V bias) and a high quantum efficiency of 73\% at room temperature under front side illumination. High detectivity (D*) values of 2.2 × 1010 cm·Hz1/2 W-1 and 7.4 × 1011 cm·Hz1/2 W-1 were observed at 200 K and room temperature, respectively.",

author = "I. Shafir and N. Snapi and D. Cohen-Elias and A. Glozman and O. Klin and E. Weiss and O. Westreich and N. Sicron and M. Katz",

note = "Publisher Copyright: {\textcopyright} 2021 Author(s).",

year = "2021",

month = feb,

day = "8",

doi = "10.1063/5.0037192",

language = "אנגלית",

volume = "118",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - High responsivity InGaAsSb p-n photodetector for extended SWIR detection

AU - Shafir, I.

AU - Snapi, N.

AU - Cohen-Elias, D.

AU - Glozman, A.

AU - Klin, O.

AU - Weiss, E.

AU - Westreich, O.

AU - Sicron, N.

AU - Katz, M.

PY - 2021/2/8

Y1 - 2021/2/8

N2 - A molecular beam epitaxy-grown InGaAsSb p-n photodetector lattice matched to GaSb for extended short wave infrared is reported. Electrical and optical characteristics were analyzed at temperatures from 200 K to room temperature. The photodetectors exhibit dark current densities of 2.9 × 10-6 A/cm2 at 200 K and 4.6 mA/cm2 at 300 K (-0.1 V bias) and a high quantum efficiency of 73% at room temperature under front side illumination. High detectivity (D*) values of 2.2 × 1010 cm·Hz1/2 W-1 and 7.4 × 1011 cm·Hz1/2 W-1 were observed at 200 K and room temperature, respectively.

AB - A molecular beam epitaxy-grown InGaAsSb p-n photodetector lattice matched to GaSb for extended short wave infrared is reported. Electrical and optical characteristics were analyzed at temperatures from 200 K to room temperature. The photodetectors exhibit dark current densities of 2.9 × 10-6 A/cm2 at 200 K and 4.6 mA/cm2 at 300 K (-0.1 V bias) and a high quantum efficiency of 73% at room temperature under front side illumination. High detectivity (D*) values of 2.2 × 1010 cm·Hz1/2 W-1 and 7.4 × 1011 cm·Hz1/2 W-1 were observed at 200 K and room temperature, respectively.

UR - https://www.scopus.com/pages/publications/85101130420

U2 - 10.1063/5.0037192

DO - 10.1063/5.0037192

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:85101130420

SN - 0003-6951

VL - 118

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 063503

ER -

High responsivity InGaAsSb p-n photodetector for extended SWIR detection

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