High responsivity InGaAsSb p-n photodetector for extended SWIR detection

I. Shafir; N. Snapi; D. Cohen-Elias; A. Glozman; O. Klin; E. Weiss; O. Westreich; N. Sicron; M. Katz

doi:10.1063/5.0037192

High responsivity InGaAsSb p-n photodetector for extended SWIR detection

I. Shafir, N. Snapi, D. Cohen-Elias, A. Glozman, O. Klin, E. Weiss, O. Westreich, N. Sicron, M. Katz

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Abstract

A molecular beam epitaxy-grown InGaAsSb p-n photodetector lattice matched to GaSb for extended short wave infrared is reported. Electrical and optical characteristics were analyzed at temperatures from 200 K to room temperature. The photodetectors exhibit dark current densities of 2.9 × 10-6 A/cm2 at 200 K and 4.6 mA/cm2 at 300 K (-0.1 V bias) and a high quantum efficiency of 73% at room temperature under front side illumination. High detectivity (D*) values of 2.2 × 1010 cm·Hz1/2 W-1 and 7.4 × 1011 cm·Hz1/2 W-1 were observed at 200 K and room temperature, respectively.

Original language	English
Article number	063503
Journal	Applied Physics Letters
Volume	118
Issue number	6
DOIs	https://doi.org/10.1063/5.0037192
State	Published - 8 Feb 2021
Externally published	Yes

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title = "High responsivity InGaAsSb p-n photodetector for extended SWIR detection",

abstract = "A molecular beam epitaxy-grown InGaAsSb p-n photodetector lattice matched to GaSb for extended short wave infrared is reported. Electrical and optical characteristics were analyzed at temperatures from 200 K to room temperature. The photodetectors exhibit dark current densities of 2.9 × 10-6 A/cm2 at 200 K and 4.6 mA/cm2 at 300 K (-0.1 V bias) and a high quantum efficiency of 73% at room temperature under front side illumination. High detectivity (D*) values of 2.2 × 1010 cm·Hz1/2 W-1 and 7.4 × 1011 cm·Hz1/2 W-1 were observed at 200 K and room temperature, respectively.",

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T1 - High responsivity InGaAsSb p-n photodetector for extended SWIR detection

AU - Shafir, I.

AU - Snapi, N.

AU - Cohen-Elias, D.

AU - Glozman, A.

AU - Klin, O.

AU - Weiss, E.

AU - Westreich, O.

AU - Sicron, N.

AU - Katz, M.

PY - 2021/2/8

Y1 - 2021/2/8

N2 - A molecular beam epitaxy-grown InGaAsSb p-n photodetector lattice matched to GaSb for extended short wave infrared is reported. Electrical and optical characteristics were analyzed at temperatures from 200 K to room temperature. The photodetectors exhibit dark current densities of 2.9 × 10-6 A/cm2 at 200 K and 4.6 mA/cm2 at 300 K (-0.1 V bias) and a high quantum efficiency of 73% at room temperature under front side illumination. High detectivity (D*) values of 2.2 × 1010 cm·Hz1/2 W-1 and 7.4 × 1011 cm·Hz1/2 W-1 were observed at 200 K and room temperature, respectively.

AB - A molecular beam epitaxy-grown InGaAsSb p-n photodetector lattice matched to GaSb for extended short wave infrared is reported. Electrical and optical characteristics were analyzed at temperatures from 200 K to room temperature. The photodetectors exhibit dark current densities of 2.9 × 10-6 A/cm2 at 200 K and 4.6 mA/cm2 at 300 K (-0.1 V bias) and a high quantum efficiency of 73% at room temperature under front side illumination. High detectivity (D*) values of 2.2 × 1010 cm·Hz1/2 W-1 and 7.4 × 1011 cm·Hz1/2 W-1 were observed at 200 K and room temperature, respectively.

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High responsivity InGaAsSb p-n photodetector for extended SWIR detection

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