High-purity InP and the role of hydrogen

R. W. Glew, A. R. Adams, C. G. Crookes, P. D. Greene, S. N. Holmes, S. A. Kitching, P. C. Klipstein, D. Lancefield, R. A. Stradling, R. A. Woolley

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Extremely high-purity InP has been grown in an atmospheric-pressure MOCVD reactor over the unusually large temperature range from 575-700°C. The apparent purity of the material was enhanced by the incorporation of atomic hydrogen. At 650°C, a temperature at which many device structures are grown, a 77 K electron mobility of 190 000 cm2 V-1 s-1 was obtained with an electron concentration of 1.6 × 1014 cm-3. Removal of the hydrogen resulted in a decrease in the electron mobility and an increase in the electron concentration. After removal of the atomic hydrogen, samples grown at 650°C had 77 K electron mobilities of approximately 140 000 cm2 V-1 s-1 at an electron concentration of approximately 3.6 × 1014 cm-3. Analysis of the temperature dependence of the electron mobility indicates that the atomic hydrogen, which comes from the thermal decomposition of the phosphine on epilayer cool-down, neutralises both donors and acceptors. The incorporation and removal of hydrogen does not affect the optical characteristics of the material as measured by photoluminescence and far-infrared photoconductivity.

Original languageEnglish
Pages (from-to)1088-1092
Number of pages5
JournalSemiconductor Science and Technology
Issue number11
StatePublished - Nov 1991
Externally publishedYes


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