High pressure studies on topological insulator Bi2Se3

T. R. Devidas, Awadhesh Mani, A. Bharathi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


High pressure electrical resistivity measurements upto 7.5 GPa have been performed on single crystal of Bi2Se3 topological insulator to study the evolution of its transport properties. A progressive increase in pressure drives this system from metal to increasingly insulating behaviour indicating the suppression of bulk conductivity. In the pressure induced insulating regime, the resistivity exhibits two step increase which is separated by a shoulder. The shoulder temperature is seen to increases with pressure.

Original languageEnglish
Title of host publicationSolid State Physics - Proceedings of the 57th DAE Solid State Physics Symposium 2012
Number of pages2
StatePublished - 2013
Externally publishedYes
Event57th DAE Solid State Physics Symposium 2012 - Bombay, Mumbai, India
Duration: 3 Dec 20127 Dec 2012

Publication series

NameAIP Conference Proceedings
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


Conference57th DAE Solid State Physics Symposium 2012
CityBombay, Mumbai


  • BiSe
  • Metal-insulator transition, High pressure
  • Topological insulator


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