High-pressure structure and electronic transport in hole-doped (formula presented) perovskites

C. Meneghini, D. Levy, S. Mobilio, M. Ortolani, M. Nuñez-Reguero, Ashwani Kumar, D. D. Sarma

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The structure and electronic transport properties of hole-doped (formula presented) perovskite have been investigated as a function of pressure up to about 15 GPa. Though the applied pressure enhances the electrical conductivity, the high-pressure resistivity data point out a competing mechanism interfering with the pressure-induced charge delocalization that prevent the system from reaching a fully metallic state around room temperature. X-ray diffraction results reveal unexpected structural modifications with increasing pressure that can be interpreted with changes in the coherence length of the Jahn-Teller distortions.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number1
DOIs
StatePublished - 2002
Externally publishedYes

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