High-power GaN electronic devices

Gallium Nitride (GaN) and related materials (especially AlGaN) recently have attracted a lot of interest for applications in high-power electronics capable of operation at elevated temperatures and high frequencies. The AlGaInN system offers numerous advantages. These include wide bandgaps, good transport properties, the availability of heterostructures (particularly AlGaN/GaN), the experience base gained by the commercialization of GaN-based laser and light-emitting diodes and the existence of a high growth rate epitaxial method (hydride vapor phase epitaxy, HVPE) for producing very thick layers or even quasisubstrates. These attributes have led to rapid progress in the realization of a broad range of GaN electronic devices. Al_xGa_1-xN (x=0∼.25) Schottky rectifiers were fabricated in a lateral geometry employing p⁺-implanted guard rings and rectifying contact overlap onto an SiO₂ passivation layer. The reverse breakdown voltage (V_B) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al_0.25Ga_0.75N and 6350 V for GaN, respectively, for 100-μm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of ≤9.67 × 10⁵ Vcm^-2, which is roughly a factor of 5 lower than the theoretical maximum in bulk GaN. The figure of merit (V_B)²/R_ON, where R_ON is the on-state resistance, was in the range 94 to 268 MWcm^-2 for all the devices. Edge-terminated Schottky rectifiers were also fabricated on quasibulk GaN substrates grown by HVPE. For small-diameter (75 μm) Schottky contacts, Vs measured in the vertical geometry was ∼700V, with an on-state resistance (R_ON) of 3 mΩcm², producing a figure-of-merit V_B²/R_ON of 162.8 MW-cm². GaN p-i-n diodes were also fabricated. A direct comparison of GaN p-i-n Schottky rectifiers fabricated on the same GaN wafer showed higher reverse breakdown voltage for the former (490 V vs. 347 V for the Schottky diodes), but lower forward turn-on voltages for the latter (∼3.5 V vs. ∼5 V for the p-i-n diodes). The forward I-V characteristics of the p-i-n rectifiers show behavior consistent with a multiple recombination center model. The reverse current in both types of rectifiers was dominated by surface perimeter leakage at moderate bias. Finally, all of the devices we fabricated showed negative temperature coefficients for reverse breakdown voltage, which is a clear disadvantage for elevated temperature operation. Bipolar devices are particularly interesting for high current applications such as microwave power amplifiers for radar, satellite, and communication in the 1∼5 GHz range, powers >100 W, and operating temperatures >425°C. pnp Bipolar Junction Transistors and pnp Heterojunction Bipolar Transistors were demonstrated for the first time. For power microwave applications, small area self-aligned npn GaN/AlGaN HBTs were attempted. The devices showed very promising direct current characteristics.