TY - JOUR
T1 - High-Performance O-Band Angled Multimode Interference Splitter with Buried Silicon Nitride Waveguide for Advanced Data Center Optical Networks
AU - Ioudashkin, Eduard
AU - Malka, Dror
N1 - Publisher Copyright:
© 2025 by the authors.
PY - 2025/4
Y1 - 2025/4
N2 - Many current 1 × 2 splitter couplers based on multimode interference (MMI) face difficulties such as significant back reflection and limited flexibility in waveguide segmentation at the output, which necessitate the addition of transitional structures like tapered waveguides or S-Bends. These limitations reduce their effectiveness as photonic data-center applications, where precise waveguide configurations are crucial. To address these challenges, we propose a novel nanoscale 1 × 2 angled multimode interference (AMMI) power splitter with silicon nitride (SiN) buried core and silica cladding. The innovative angled light path design improved performance by minimizing back reflections back to the source and by providing greater flexibility of waveguide interconnections, making the splitter more adaptable for data-center applications. The SiN core was selected due to its lower refractive index contrast with silica compared to silicon, which helps further reduce back reflection. The dimensions of the splitter were optimized using full vectorial beam propagation method (FV-BPM), finite-difference time domain (FDTD), and multivariable optimization scanning tool (MOST) simulations to support transmission across the O-band. Our proposed device demonstrated excellent performance, achieving an excess loss of 0.22 dB and an imbalance of <0.01 dB at the output ports at an operational wavelength of 1.31 µm. The total device length is 101 µm with a thickness of 0.4 µm. Across the entire O-band range (1260–1360 nm), the performance of the splitter presented excess loss of up to 1.57 dB and an imbalance of up to 0.05 dB. Additionally, back reflections at the operational wavelength were measured at −40.96 dB and up to −39.67 dB over the O-band. This silicon-on-insulator (SOI) complementary metal-oxide semiconductor (CMOS) compatible AMMI splitter demonstrates high tolerance for manufacturing deviations due to its geometric layout, dimensions, and material selection. Furthermore, the proposed splitter is well-suited for use in O-band transceiver systems and can enhance data-center optical networks by supporting high-speed, low-loss data transmission. The compact design and CMOS compatibility make this device ideal for integrating into dense, high-performance computing environments, ensuring reliable signal distribution and minimal power loss. The splitter can support multiple communication channels, thus enhancing bandwidth and scalability for next-generation data-center infrastructures.
AB - Many current 1 × 2 splitter couplers based on multimode interference (MMI) face difficulties such as significant back reflection and limited flexibility in waveguide segmentation at the output, which necessitate the addition of transitional structures like tapered waveguides or S-Bends. These limitations reduce their effectiveness as photonic data-center applications, where precise waveguide configurations are crucial. To address these challenges, we propose a novel nanoscale 1 × 2 angled multimode interference (AMMI) power splitter with silicon nitride (SiN) buried core and silica cladding. The innovative angled light path design improved performance by minimizing back reflections back to the source and by providing greater flexibility of waveguide interconnections, making the splitter more adaptable for data-center applications. The SiN core was selected due to its lower refractive index contrast with silica compared to silicon, which helps further reduce back reflection. The dimensions of the splitter were optimized using full vectorial beam propagation method (FV-BPM), finite-difference time domain (FDTD), and multivariable optimization scanning tool (MOST) simulations to support transmission across the O-band. Our proposed device demonstrated excellent performance, achieving an excess loss of 0.22 dB and an imbalance of <0.01 dB at the output ports at an operational wavelength of 1.31 µm. The total device length is 101 µm with a thickness of 0.4 µm. Across the entire O-band range (1260–1360 nm), the performance of the splitter presented excess loss of up to 1.57 dB and an imbalance of up to 0.05 dB. Additionally, back reflections at the operational wavelength were measured at −40.96 dB and up to −39.67 dB over the O-band. This silicon-on-insulator (SOI) complementary metal-oxide semiconductor (CMOS) compatible AMMI splitter demonstrates high tolerance for manufacturing deviations due to its geometric layout, dimensions, and material selection. Furthermore, the proposed splitter is well-suited for use in O-band transceiver systems and can enhance data-center optical networks by supporting high-speed, low-loss data transmission. The compact design and CMOS compatibility make this device ideal for integrating into dense, high-performance computing environments, ensuring reliable signal distribution and minimal power loss. The splitter can support multiple communication channels, thus enhancing bandwidth and scalability for next-generation data-center infrastructures.
KW - angled multimode interference
KW - back reflection
KW - O-band
KW - silicon nitride
UR - http://www.scopus.com/inward/record.url?scp=105003537652&partnerID=8YFLogxK
U2 - 10.3390/photonics12040322
DO - 10.3390/photonics12040322
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:105003537652
SN - 2304-6732
VL - 12
JO - Photonics
JF - Photonics
IS - 4
M1 - 322
ER -