High-gain infrared-to-visible upconversion light-emitting phototransistors

Hyeonggeun Yu; Doyoung Kim; Jinhyung Lee; Sujin Baek; Jaewoong Lee; Rajiv Singh; Franky So

doi:10.1038/nphoton.2015.270

High-gain infrared-to-visible upconversion light-emitting phototransistors

Hyeonggeun Yu
, Doyoung Kim
, Jinhyung Lee
, Sujin Baek
, Jaewoong Lee
, Rajiv Singh
, Franky So

Research output: Contribution to journal › Article › peer-review

122 Scopus citations

Abstract

Infrared-to-visible upconversion devices made by integrating an infrared quantum dot photodetector with an organic light-emitting diode potentially offer a route to low-cost, pixel-free infrared imaging. However, making such devices sufficiently efficient for practical use is a challenge. Here, we report a high-gain vertical phototransistor with a perforated metallic source electrode having an EQE up to 1 × 10⁵ % and a detectivity of 1.2 × 10¹³ Jones. By incorporating a phosphorescent organic light-emitting diode in this phototransistor, an infrared-to-visible upconversion LEPT with a photon-to-photon conversion efficiency of over 1,000% is demonstrated.

Original language	English
Pages (from-to)	129-134
Number of pages	6
Journal	Nature Photonics
Volume	10
Issue number	2
DOIs	https://doi.org/10.1038/nphoton.2015.270
State	Published - 1 Feb 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 Macmillan Publishers Limited. All rights reserved.

Funding

The authors acknowledge financial support from Nanoholdings LLC. The experimental part of the work was carried out at the University of Florida.

Funders
Nanoholdings LLC

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10.1038/nphoton.2015.270

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AU - Singh, Rajiv

AU - So, Franky

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High-gain infrared-to-visible upconversion light-emitting phototransistors

Abstract

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