Infrared-to-visible upconversion devices made by integrating an infrared quantum dot photodetector with an organic light-emitting diode potentially offer a route to low-cost, pixel-free infrared imaging. However, making such devices sufficiently efficient for practical use is a challenge. Here, we report a high-gain vertical phototransistor with a perforated metallic source electrode having an EQE up to 1 × 105 % and a detectivity of 1.2 × 1013 Jones. By incorporating a phosphorescent organic light-emitting diode in this phototransistor, an infrared-to-visible upconversion LEPT with a photon-to-photon conversion efficiency of over 1,000% is demonstrated.
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