High efficiency nitrogen incorporation technique using ultraviolet assisted low temperature process for hafnia gate dielectric

S. Y. Son, P. Kumar, J. S. Lee, R. K. Singh

Research output: Contribution to journalArticlepeer-review

Abstract

An evaluation of a low temperature process (∼350 °C) for nitrogen incorporation in hafnia gate dielectric has been reported. This method is based on postdeposition nitridation under ultraviolet light illuminated N H3 ambience. X-ray photoelectron spectroscopy confirmed the amount of nitrogen incorporated by this process was comparable to that of high temperature (∼650 °C) thermal nitridation (∼7%). Uniformity of nitrogen distribution in the film was analyzed by secondary ion mass spectroscopy. A capacitance density of ∼3.96 μF cm2 with 9.4 Å equivalent oxide thickness and 10 Å thick interface layer were obtained by ultraviolet assisted nitridation process.

Original languageEnglish
Article number092906
JournalApplied Physics Letters
Volume92
Issue number9
DOIs
StatePublished - 2008
Externally publishedYes

Funding

We gratefully acknowledge support of Samsung Electronic Co., Ltd. for this work.

FundersFunder number
Samsung Electronic Co.

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