High density dry etching of (Ba,Sr)TiO3 and LaNiO3

K. P. Lee, K. B. Jung, A. Srivastava, D. Kumar, R. K. Singh, S. J. Pearton

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


High density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤ 100 angstrom·min-1) under all conditions, the Cl2/Ar produced a smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of approx. 900 angstrom·min-1 for both materials were achieved with selectivities of approx. 16 for BST and approx. 7 for LNO over Si. A single layer of thick (approx. 7 μm) photoresist is an effective mask under these conditions.

Original languageEnglish
Pages (from-to)91-96
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2000
Externally publishedYes
EventFerroelectric Thin Films VIII - Boston, MA, USA
Duration: 29 Nov 19992 Dec 1999


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