High density dry etching of (Ba,Sr)TiO3 and LaNiO3

K. P. Lee; K. B. Jung; A. Srivastava; D. Kumar; R. K. Singh; S. J. Pearton

High density dry etching of (Ba,Sr)TiO₃ and LaNiO₃

K. P. Lee, K. B. Jung, A. Srivastava, D. Kumar, R. K. Singh, S. J. Pearton

University of Florida

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

High density plasma etching of (Ba,Sr)TiO₃ (BST) and LaNiO₃ (LNO) thin films was performed in two different plasma chemistries, Cl₂/Ar and CH₄/H₂/Ar. While the latter chemistry produced extremely low etch rates (≤ 100 angstrom·min^-1) under all conditions, the Cl₂/Ar produced a smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of approx. 900 angstrom·min^-1 for both materials were achieved with selectivities of approx. 16 for BST and approx. 7 for LNO over Si. A single layer of thick (approx. 7 μm) photoresist is an effective mask under these conditions.

Original language	English
Pages (from-to)	91-96
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	596
State	Published - 2000
Externally published	Yes
Event	Ferroelectric Thin Films VIII - Boston, MA, USA Duration: 29 Nov 1999 → 2 Dec 1999

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title = "High density dry etching of (Ba,Sr)TiO3 and LaNiO3",

abstract = "High density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤ 100 angstrom·min-1) under all conditions, the Cl2/Ar produced a smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of approx. 900 angstrom·min-1 for both materials were achieved with selectivities of approx. 16 for BST and approx. 7 for LNO over Si. A single layer of thick (approx. 7 μm) photoresist is an effective mask under these conditions.",

author = "Lee, {K. P.} and Jung, {K. B.} and A. Srivastava and D. Kumar and Singh, {R. K.} and Pearton, {S. J.}",

year = "2000",

language = "אנגלית",

volume = "596",

pages = "91--96",

journal = "Materials Research Society Symposium - Proceedings",

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note = "Ferroelectric Thin Films VIII ; Conference date: 29-11-1999 Through 02-12-1999",

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TY - JOUR

T1 - High density dry etching of (Ba,Sr)TiO3 and LaNiO3

AU - Lee, K. P.

AU - Jung, K. B.

AU - Srivastava, A.

AU - Kumar, D.

AU - Singh, R. K.

AU - Pearton, S. J.

PY - 2000

Y1 - 2000

N2 - High density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤ 100 angstrom·min-1) under all conditions, the Cl2/Ar produced a smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of approx. 900 angstrom·min-1 for both materials were achieved with selectivities of approx. 16 for BST and approx. 7 for LNO over Si. A single layer of thick (approx. 7 μm) photoresist is an effective mask under these conditions.

AB - High density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤ 100 angstrom·min-1) under all conditions, the Cl2/Ar produced a smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of approx. 900 angstrom·min-1 for both materials were achieved with selectivities of approx. 16 for BST and approx. 7 for LNO over Si. A single layer of thick (approx. 7 μm) photoresist is an effective mask under these conditions.

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SN - 0272-9172

VL - 596

SP - 91

EP - 96

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Ferroelectric Thin Films VIII

Y2 - 29 November 1999 through 2 December 1999

ER -

High density dry etching of (Ba,Sr)TiO₃ and LaNiO₃

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