Hf-O-N and HfO2 barrier layers for Hf-Ti-O gate dielectric thin films

K. Ramani; R. K. Singh; V. Craciun

doi:10.1016/j.mee.2008.05.001

Hf-O-N and HfO₂ barrier layers for Hf-Ti-O gate dielectric thin films

K. Ramani
, R. K. Singh
, V. Craciun

University of Florida
National Institute for Laser, Plasma and Radiation Physics

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Hf-O-N and HfO₂ thin films were evaluated as barrier layers for Hf-Ti-O metal oxide semiconductor capacitor structures. The films were processed by sequential pulsed laser deposition at 300 °C and ultra-violet ozone oxidation process at 500 °C. The as-deposited Hf-Ti-O films were polycrystalline in nature after oxidation at 500 °C and a fully crystallized (o)-HfTiO₄ phase was formed upon high temperature annealing at 900 °C. The Hf-Ti-O films deposited on Hf-O-N barrier layer exhibited a higher dielectric constant than the films deposited on the HfO₂ barrier layer. Leakage current densities lower than 5 × 10 A/cm² were achieved with both barrier layers at a sub 20 Å equivalent oxide thickness.

Original language	English
Pages (from-to)	1758-1761
Number of pages	4
Journal	Microelectronic Engineering
Volume	85
Issue number	8
DOIs	https://doi.org/10.1016/j.mee.2008.05.001
State	Published - Aug 2008
Externally published	Yes

Funding

The authors would like to gratefully acknowledge Kerry Siebein from MAIC, University of Florida for assistance with characterization and VC’s work was supported by Romanian CNCSIS Grant # 108GR.

Funders	Funder number
CNCSIS	108GR
MAIC
University of Florida

Keywords

Capacitance
Dielectrics
High k
Leakage
UV

Access to Document

10.1016/j.mee.2008.05.001

Cite this

@article{472db3cd8b644f95b414759f80c46aa1,

title = "Hf-O-N and HfO2 barrier layers for Hf-Ti-O gate dielectric thin films",

abstract = "Hf-O-N and HfO2 thin films were evaluated as barrier layers for Hf-Ti-O metal oxide semiconductor capacitor structures. The films were processed by sequential pulsed laser deposition at 300 °C and ultra-violet ozone oxidation process at 500 °C. The as-deposited Hf-Ti-O films were polycrystalline in nature after oxidation at 500 °C and a fully crystallized (o)-HfTiO4 phase was formed upon high temperature annealing at 900 °C. The Hf-Ti-O films deposited on Hf-O-N barrier layer exhibited a higher dielectric constant than the films deposited on the HfO2 barrier layer. Leakage current densities lower than 5 × 10 A/cm2 were achieved with both barrier layers at a sub 20 {\AA} equivalent oxide thickness.",

keywords = "Capacitance, Dielectrics, High k, Leakage, UV",

author = "K. Ramani and Singh, \{R. K.\} and V. Craciun",

year = "2008",

month = aug,

doi = "10.1016/j.mee.2008.05.001",

language = "אנגלית",

volume = "85",

pages = "1758--1761",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "8",

}

TY - JOUR

T1 - Hf-O-N and HfO2 barrier layers for Hf-Ti-O gate dielectric thin films

AU - Ramani, K.

AU - Singh, R. K.

AU - Craciun, V.

PY - 2008/8

Y1 - 2008/8

N2 - Hf-O-N and HfO2 thin films were evaluated as barrier layers for Hf-Ti-O metal oxide semiconductor capacitor structures. The films were processed by sequential pulsed laser deposition at 300 °C and ultra-violet ozone oxidation process at 500 °C. The as-deposited Hf-Ti-O films were polycrystalline in nature after oxidation at 500 °C and a fully crystallized (o)-HfTiO4 phase was formed upon high temperature annealing at 900 °C. The Hf-Ti-O films deposited on Hf-O-N barrier layer exhibited a higher dielectric constant than the films deposited on the HfO2 barrier layer. Leakage current densities lower than 5 × 10 A/cm2 were achieved with both barrier layers at a sub 20 Å equivalent oxide thickness.

AB - Hf-O-N and HfO2 thin films were evaluated as barrier layers for Hf-Ti-O metal oxide semiconductor capacitor structures. The films were processed by sequential pulsed laser deposition at 300 °C and ultra-violet ozone oxidation process at 500 °C. The as-deposited Hf-Ti-O films were polycrystalline in nature after oxidation at 500 °C and a fully crystallized (o)-HfTiO4 phase was formed upon high temperature annealing at 900 °C. The Hf-Ti-O films deposited on Hf-O-N barrier layer exhibited a higher dielectric constant than the films deposited on the HfO2 barrier layer. Leakage current densities lower than 5 × 10 A/cm2 were achieved with both barrier layers at a sub 20 Å equivalent oxide thickness.

KW - Capacitance

KW - Dielectrics

KW - High k

KW - Leakage

KW - UV

UR - https://www.scopus.com/pages/publications/48949116044

U2 - 10.1016/j.mee.2008.05.001

DO - 10.1016/j.mee.2008.05.001

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:48949116044

SN - 0167-9317

VL - 85

SP - 1758

EP - 1761

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 8

ER -