Hf-O-N and HfO2 barrier layers for Hf-Ti-O gate dielectric thin films

K. Ramani, R. K. Singh, V. Craciun

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Hf-O-N and HfO2 thin films were evaluated as barrier layers for Hf-Ti-O metal oxide semiconductor capacitor structures. The films were processed by sequential pulsed laser deposition at 300 °C and ultra-violet ozone oxidation process at 500 °C. The as-deposited Hf-Ti-O films were polycrystalline in nature after oxidation at 500 °C and a fully crystallized (o)-HfTiO4 phase was formed upon high temperature annealing at 900 °C. The Hf-Ti-O films deposited on Hf-O-N barrier layer exhibited a higher dielectric constant than the films deposited on the HfO2 barrier layer. Leakage current densities lower than 5 × 10 A/cm2 were achieved with both barrier layers at a sub 20 Å equivalent oxide thickness.

Original languageEnglish
Pages (from-to)1758-1761
Number of pages4
JournalMicroelectronic Engineering
Issue number8
StatePublished - Aug 2008
Externally publishedYes


The authors would like to gratefully acknowledge Kerry Siebein from MAIC, University of Florida for assistance with characterization and VC’s work was supported by Romanian CNCSIS Grant # 108GR.

FundersFunder number
University of Florida


    • Capacitance
    • Dielectrics
    • High k
    • Leakage
    • UV


    Dive into the research topics of 'Hf-O-N and HfO2 barrier layers for Hf-Ti-O gate dielectric thin films'. Together they form a unique fingerprint.

    Cite this