HEAVILY DOPED, HIGHLY COMPENSATED CRYSTAL SEMICONDUCTOR AS A MODEL OF THE AMORPHOUS SEMICONDUCTOR.

S. M. Ryvkin; I. S. Shlimak

HEAVILY DOPED, HIGHLY COMPENSATED CRYSTAL SEMICONDUCTOR AS A MODEL OF THE AMORPHOUS SEMICONDUCTOR.

S. M. Ryvkin, I. S. Shlimak

Department of Physics

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

The large-scale potential relief was produced experimentally in a classical crystal semiconductor n-Germanium by compensating it with chemical acceptors. Highly compensated crystal germanium exhibited some properties characteristic for amorphous semiconductors: switching, the absence of a constant conduction activation energy, residual conducctivity etc. The extensive analogy found in these experiments offers the possibility of considering the highly doped, compensated crystal semiconductor as a controlled model of some amorphous semiconductors.

Original language	English
Pages	1155-1159
Number of pages	5
State	Published - 1973
Event	Int Conf on Amorphous and Liq Semicond, 5th, Proc - Garmsich-Partenkirchen, W Ger Duration: 3 Sep 1973 → 8 Sep 1973

Conference

Conference	Int Conf on Amorphous and Liq Semicond, 5th, Proc
City	Garmsich-Partenkirchen, W Ger
Period	3/09/73 → 8/09/73

Cite this

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title = "HEAVILY DOPED, HIGHLY COMPENSATED CRYSTAL SEMICONDUCTOR AS A MODEL OF THE AMORPHOUS SEMICONDUCTOR.",

abstract = "The large-scale potential relief was produced experimentally in a classical crystal semiconductor n-Germanium by compensating it with chemical acceptors. Highly compensated crystal germanium exhibited some properties characteristic for amorphous semiconductors: switching, the absence of a constant conduction activation energy, residual conducctivity etc. The extensive analogy found in these experiments offers the possibility of considering the highly doped, compensated crystal semiconductor as a controlled model of some amorphous semiconductors.",

author = "Ryvkin, {S. M.} and Shlimak, {I. S.}",

year = "1973",

language = "אנגלית",

pages = "1155--1159",

note = "Int Conf on Amorphous and Liq Semicond, 5th, Proc ; Conference date: 03-09-1973 Through 08-09-1973",

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AU - Ryvkin, S. M.

AU - Shlimak, I. S.

PY - 1973

Y1 - 1973

N2 - The large-scale potential relief was produced experimentally in a classical crystal semiconductor n-Germanium by compensating it with chemical acceptors. Highly compensated crystal germanium exhibited some properties characteristic for amorphous semiconductors: switching, the absence of a constant conduction activation energy, residual conducctivity etc. The extensive analogy found in these experiments offers the possibility of considering the highly doped, compensated crystal semiconductor as a controlled model of some amorphous semiconductors.

AB - The large-scale potential relief was produced experimentally in a classical crystal semiconductor n-Germanium by compensating it with chemical acceptors. Highly compensated crystal germanium exhibited some properties characteristic for amorphous semiconductors: switching, the absence of a constant conduction activation energy, residual conducctivity etc. The extensive analogy found in these experiments offers the possibility of considering the highly doped, compensated crystal semiconductor as a controlled model of some amorphous semiconductors.

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AN - SCOPUS:0016408282

SP - 1155

EP - 1159

T2 - Int Conf on Amorphous and Liq Semicond, 5th, Proc

Y2 - 3 September 1973 through 8 September 1973

ER -

HEAVILY DOPED, HIGHLY COMPENSATED CRYSTAL SEMICONDUCTOR AS A MODEL OF THE AMORPHOUS SEMICONDUCTOR.

Abstract

Conference

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