Abstract
We report on the influence of a gate voltage on the Hall constant [electric field effect Hall constant (EFE-HC)] in a quantum-sized Bi film. The dependence of EFE-HC on the applied electric field, film thickness, and temperature was measured. The electric field effect induces a change of several tens of percent in the Hall constant under an applied electric field of 108 V/m. The effect depends on the film thickness in an oscillatory manner similar to that observed in other quantum-size characteristics. We present an interpretation of the known temperature maximum of HC in quantum size Bi films in absence of EFE, by considering the temperature dependence of the electron and hole mobilities.
| Original language | English |
|---|---|
| Pages (from-to) | 2634-2640 |
| Number of pages | 7 |
| Journal | Journal of Applied Physics |
| Volume | 88 |
| Issue number | 5 |
| DOIs | |
| State | Published - 1 Sep 2000 |
Bibliographical note
Publisher Copyright:© 2000 American Institute of Physics.