Halide perovskite dynamics at work: Large cations at 2D-on-3D interfaces are mobile

Sujit Kumar, Lothar Houben, Katya Rechav, David Cahen

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Ultra-thin hydrophobic capping layers of two-dimensional (2D) onto three-dimensional (3D) metal halide perovskites (HaPs) are an attractive strategy for preventing ambient-induced degradation and minimizing interfacial non-idealities of 3D HaPs. However, it is not obvious in how far the unusual 3D HaP lattice dynamics affect 2D-on-3D HaP composites' stability, especially at their interface, an issue important for devices made with such composites. Using low electron-fluence, four-dimensional scanning transmission electron microscopy and nanobeam electron diffraction, we show formation of the 2D (n = 1) phase on top of 3D perovskite, using focused-ion beam-prepared cross-sections, under conditions that minimize radiation damage. The 2D-on-3D HaP composites were prepared by controlled gas-phase surface cation exchange of 3D MAPbI3 films to form A2PbI4, where A = (fluoro- )phenyl-ethyl-ammonium, (F)PEA. We provide direct evidence for 2D phase formation also inside the 3D matrix, likely via A cation grain boundary diffusion, and, over time, of quasi-2D phases near the surface. These results show that the 2D/3D heterointerface is dynamic; they imply that not only small, but also large A cations, (F)PEA+, migrate. Structural rearrangements, leading to quasi-2D phase formation can be followed with the electron beam, which provides hitherto unknown atomistic insights into such interfaces, needed to assess their (in)stability. Apart from directly illustrating effects of HaP lattice dynamics, our results help understanding extensive (semi)empirical data on engineering 2D-on-3D composites and provide guidance for enhancing stability of such systems. Critically, our direct observation of electron beam-induced loss of long-range periodicity defines conditions for damage-free atomicresolution studies of HaP samples, also in device-relevant configurations.

Original languageEnglish
Article numbere2114740119
JournalProceedings of the National Academy of Sciences of the United States of America
Volume119
Issue number10
DOIs
StatePublished - 8 Mar 2022

Bibliographical note

Publisher Copyright:
© 2022 National Academy of Sciences. All rights reserved.

Funding

ACKNOWLEDGMENTS. S.K. held an Israel Council of Higher Learning for a Planning and Budgeting Committee Postdoctoral Fellowship at Bar-Ilan University. S.K. and D.C. thank the Israel Science Foundation (ISF) for support through its program with the People's Republic of China, PRC’s National Science Foundation, ISF-NSFC, for collaboration with Hongzheng Chen (Zheijang University). D.C. thanks Professor Chen for the discussions that provided the initial stimulus for the project. We thank the reviewers for their valuable, constructive comments. At the Weizmann Institute of Science (WIS) the work was supported by the Yotam project, the WIS’s Sustainability and Energy Research Initiative, and by the Minerva Centre for Self-Repairing Systems for Energy and Sustainability.

FundersFunder number
Israel Council of Higher Learning
Minerva Centre for Self-Repairing Systems for Energy and Sustainability
Weizmann Institute of Science
Bar-Ilan University
Israel Science Foundation

    Keywords

    • 2D/3D interface
    • 4D-STEM
    • Halide perovskites
    • Instability
    • NBED

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