Abstract
A type II superlattice InGaAs/GaAsSb based on InP for extended short wave infrared photodetector was grown using metalorganic chemical vapor deposition reactor. The layers were characterized using photoluminescence and X-ray diffraction and a functional photodetector was fabricated. TMIn, TMGa, TMSb and TBAs were used as metalorganic precursors and DEZn was the P dopant source. The growth was carried out at 600 °C and 400 Torr with V/III ratio of 49 and 2.9 during the InGaAs and the GaAsSb growth respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 199-202 |
| Number of pages | 4 |
| Journal | Infrared Physics and Technology |
| Volume | 95 |
| DOIs | |
| State | Published - Dec 2018 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2018 Elsevier B.V.
Funding
The authors wish to thank Mr. N. Snapi for the XRD measurements performed at SCD-SemiConductor Devices, Israel, to Mr. S. Saad and Mr. A. Bloom for technical support. In addition the authors acknowledge financial support from the PAZI foundation .
| Funders | Funder number |
|---|---|
| PAZI foundation |
Keywords
- InGaAs/GaAsSb
- Superlattice
- Type II
- eSWIR