Growth of InGaAs/GaAsSb type II superlattice for eSWIR photodetector using MOCVD

D. C. Elias, I. Shafir, T. Meir, O. Sinai, D. Memram, S. S. Shusterman, M. Katz

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


A type II superlattice InGaAs/GaAsSb based on InP for extended short wave infrared photodetector was grown using metalorganic chemical vapor deposition reactor. The layers were characterized using photoluminescence and X-ray diffraction and a functional photodetector was fabricated. TMIn, TMGa, TMSb and TBAs were used as metalorganic precursors and DEZn was the P dopant source. The growth was carried out at 600 °C and 400 Torr with V/III ratio of 49 and 2.9 during the InGaAs and the GaAsSb growth respectively.

Original languageEnglish
Pages (from-to)199-202
Number of pages4
JournalInfrared Physics and Technology
StatePublished - Dec 2018
Externally publishedYes

Bibliographical note

Funding Information:
The authors wish to thank Mr. N. Snapi for the XRD measurements performed at SCD-SemiConductor Devices, Israel, to Mr. S. Saad and Mr. A. Bloom for technical support. In addition the authors acknowledge financial support from the PAZI foundation .

Publisher Copyright:
© 2018 Elsevier B.V.


  • InGaAs/GaAsSb
  • Superlattice
  • Type II
  • eSWIR


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