Abstract
A type II superlattice InGaAs/GaAsSb based on InP for extended short wave infrared photodetector was grown using metalorganic chemical vapor deposition reactor. The layers were characterized using photoluminescence and X-ray diffraction and a functional photodetector was fabricated. TMIn, TMGa, TMSb and TBAs were used as metalorganic precursors and DEZn was the P dopant source. The growth was carried out at 600 °C and 400 Torr with V/III ratio of 49 and 2.9 during the InGaAs and the GaAsSb growth respectively.
Original language | English |
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Pages (from-to) | 199-202 |
Number of pages | 4 |
Journal | Infrared Physics and Technology |
Volume | 95 |
DOIs | |
State | Published - Dec 2018 |
Externally published | Yes |
Bibliographical note
Funding Information:The authors wish to thank Mr. N. Snapi for the XRD measurements performed at SCD-SemiConductor Devices, Israel, to Mr. S. Saad and Mr. A. Bloom for technical support. In addition the authors acknowledge financial support from the PAZI foundation .
Publisher Copyright:
© 2018 Elsevier B.V.
Keywords
- InGaAs/GaAsSb
- Superlattice
- Type II
- eSWIR