Growth of InGaAs/GaAsSb type II superlattice for eSWIR photodetector using MOCVD

D. C. Elias; I. Shafir; T. Meir; O. Sinai; D. Memram; S. S. Shusterman; M. Katz

doi:10.1016/j.infrared.2018.10.032

Growth of InGaAs/GaAsSb type II superlattice for eSWIR photodetector using MOCVD

D. C. Elias, I. Shafir, T. Meir, O. Sinai, D. Memram, S. S. Shusterman, M. Katz

The Israel Center for Advanced Photonics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A type II superlattice InGaAs/GaAsSb based on InP for extended short wave infrared photodetector was grown using metalorganic chemical vapor deposition reactor. The layers were characterized using photoluminescence and X-ray diffraction and a functional photodetector was fabricated. TMIn, TMGa, TMSb and TBAs were used as metalorganic precursors and DEZn was the P dopant source. The growth was carried out at 600 °C and 400 Torr with V/III ratio of 49 and 2.9 during the InGaAs and the GaAsSb growth respectively.

Original language	English
Pages (from-to)	199-202
Number of pages	4
Journal	Infrared Physics and Technology
Volume	95
DOIs	https://doi.org/10.1016/j.infrared.2018.10.032
State	Published - Dec 2018
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2018 Elsevier B.V.

Funding

The authors wish to thank Mr. N. Snapi for the XRD measurements performed at SCD-SemiConductor Devices, Israel, to Mr. S. Saad and Mr. A. Bloom for technical support. In addition the authors acknowledge financial support from the PAZI foundation .

Funders	Funder number
PAZI foundation

Keywords

InGaAs/GaAsSb
Superlattice
Type II
eSWIR

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10.1016/j.infrared.2018.10.032

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abstract = "A type II superlattice InGaAs/GaAsSb based on InP for extended short wave infrared photodetector was grown using metalorganic chemical vapor deposition reactor. The layers were characterized using photoluminescence and X-ray diffraction and a functional photodetector was fabricated. TMIn, TMGa, TMSb and TBAs were used as metalorganic precursors and DEZn was the P dopant source. The growth was carried out at 600 °C and 400 Torr with V/III ratio of 49 and 2.9 during the InGaAs and the GaAsSb growth respectively.",

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author = "Elias, {D. C.} and I. Shafir and T. Meir and O. Sinai and D. Memram and Shusterman, {S. S.} and M. Katz",

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doi = "10.1016/j.infrared.2018.10.032",

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AU - Elias, D. C.

AU - Shafir, I.

AU - Meir, T.

AU - Sinai, O.

AU - Memram, D.

AU - Shusterman, S. S.

AU - Katz, M.

PY - 2018/12

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AB - A type II superlattice InGaAs/GaAsSb based on InP for extended short wave infrared photodetector was grown using metalorganic chemical vapor deposition reactor. The layers were characterized using photoluminescence and X-ray diffraction and a functional photodetector was fabricated. TMIn, TMGa, TMSb and TBAs were used as metalorganic precursors and DEZn was the P dopant source. The growth was carried out at 600 °C and 400 Torr with V/III ratio of 49 and 2.9 during the InGaAs and the GaAsSb growth respectively.

KW - InGaAs/GaAsSb

KW - Superlattice

KW - Type II

KW - eSWIR

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ER -

Growth of InGaAs/GaAsSb type II superlattice for eSWIR photodetector using MOCVD

Abstract

Bibliographical note

Funding

Keywords

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