Growth of InGaAs/GaAsSb type II superlattice for eSWIR photodetector using MOCVD

D. C. Elias; I. Shafir; T. Meir; O. Sinai; D. Memram; S. S. Shusterman; M. Katz

doi:10.1016/j.infrared.2018.10.032

Growth of InGaAs/GaAsSb type II superlattice for eSWIR photodetector using MOCVD

D. C. Elias, I. Shafir, T. Meir, O. Sinai, D. Memram, S. S. Shusterman, M. Katz

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A type II superlattice InGaAs/GaAsSb based on InP for extended short wave infrared photodetector was grown using metalorganic chemical vapor deposition reactor. The layers were characterized using photoluminescence and X-ray diffraction and a functional photodetector was fabricated. TMIn, TMGa, TMSb and TBAs were used as metalorganic precursors and DEZn was the P dopant source. The growth was carried out at 600 °C and 400 Torr with V/III ratio of 49 and 2.9 during the InGaAs and the GaAsSb growth respectively.

Original language	English
Pages (from-to)	199-202
Number of pages	4
Journal	Infrared Physics and Technology
Volume	95
DOIs	https://doi.org/10.1016/j.infrared.2018.10.032
State	Published - Dec 2018
Externally published	Yes

Bibliographical note

Funding Information:
The authors wish to thank Mr. N. Snapi for the XRD measurements performed at SCD-SemiConductor Devices, Israel, to Mr. S. Saad and Mr. A. Bloom for technical support. In addition the authors acknowledge financial support from the PAZI foundation .

Publisher Copyright:
© 2018 Elsevier B.V.

Keywords

InGaAs/GaAsSb
Superlattice
Type II
eSWIR

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10.1016/j.infrared.2018.10.032

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title = "Growth of InGaAs/GaAsSb type II superlattice for eSWIR photodetector using MOCVD",

abstract = "A type II superlattice InGaAs/GaAsSb based on InP for extended short wave infrared photodetector was grown using metalorganic chemical vapor deposition reactor. The layers were characterized using photoluminescence and X-ray diffraction and a functional photodetector was fabricated. TMIn, TMGa, TMSb and TBAs were used as metalorganic precursors and DEZn was the P dopant source. The growth was carried out at 600 °C and 400 Torr with V/III ratio of 49 and 2.9 during the InGaAs and the GaAsSb growth respectively.",

keywords = "InGaAs/GaAsSb, Superlattice, Type II, eSWIR",

author = "Elias, {D. C.} and I. Shafir and T. Meir and O. Sinai and D. Memram and Shusterman, {S. S.} and M. Katz",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = dec,

doi = "10.1016/j.infrared.2018.10.032",

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volume = "95",

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T1 - Growth of InGaAs/GaAsSb type II superlattice for eSWIR photodetector using MOCVD

AU - Elias, D. C.

AU - Shafir, I.

AU - Meir, T.

AU - Sinai, O.

AU - Memram, D.

AU - Shusterman, S. S.

AU - Katz, M.

PY - 2018/12

Y1 - 2018/12

N2 - A type II superlattice InGaAs/GaAsSb based on InP for extended short wave infrared photodetector was grown using metalorganic chemical vapor deposition reactor. The layers were characterized using photoluminescence and X-ray diffraction and a functional photodetector was fabricated. TMIn, TMGa, TMSb and TBAs were used as metalorganic precursors and DEZn was the P dopant source. The growth was carried out at 600 °C and 400 Torr with V/III ratio of 49 and 2.9 during the InGaAs and the GaAsSb growth respectively.

AB - A type II superlattice InGaAs/GaAsSb based on InP for extended short wave infrared photodetector was grown using metalorganic chemical vapor deposition reactor. The layers were characterized using photoluminescence and X-ray diffraction and a functional photodetector was fabricated. TMIn, TMGa, TMSb and TBAs were used as metalorganic precursors and DEZn was the P dopant source. The growth was carried out at 600 °C and 400 Torr with V/III ratio of 49 and 2.9 during the InGaAs and the GaAsSb growth respectively.

KW - InGaAs/GaAsSb

KW - Superlattice

KW - Type II

KW - eSWIR

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ER -

Growth of InGaAs/GaAsSb type II superlattice for eSWIR photodetector using MOCVD

Abstract

Bibliographical note

Keywords

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