Growth of dense SiC films on Si at medium temperatures by pulsed laser deposition

The deposition of amorphous silicon carbide films on silicon using pulsed laser deposition technique at moderate temperatures was analyzed. The crystalline structure was examined by X-ray diffraction while chemical composition and atomic bonding were examined using X-ray photoelectron spectroscopy. Results indicated a decrease in the oxygen content of the deposited films with increase of the laser repetition rate and substrate temperature. It was concluded that SiC films are highly suitable for protective coatings.