Growth of Ag nanostructures on high-index Si (5 5 12) surfaces under UHV conditions: effect of prior surface treatment before deposition

Anjan Bhukta; Puspendu Guha; Arnab Ghosh; Paramita Maiti; Parlapalli Venkata Satyam

doi:10.1007/s00339-016-9929-6

Growth of Ag nanostructures on high-index Si (5 5 12) surfaces under UHV conditions: effect of prior surface treatment before deposition

Anjan Bhukta, Puspendu Guha, Arnab Ghosh, Paramita Maiti, Parlapalli Venkata Satyam

Institute of Physics Bhubaneswar

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

High-index substrates, such as Si (5 5 12), provide self-assembled one-dimensional periodic array of structures upon reconstruction and can be used as templates for growth of aligned nanoscale structures. Crystalline quality of Ag nanostructures grown under UHV conditions using a molecular beam epitaxy system on reconstructed Si (5 5 12) surface is compared with those structures grown on HF-treated and native-oxide-covered Si (5 5 12) surfaces. These have been characterized by using reflection high-energy electron diffraction (RHEED), transmission electron microscopy (TEM) and in situ scanning tunneling microscopy methods. The RHEED and TEM studies confirm the polycrystalline, textured and crystalline nature of the Ag nanostructures grown on Si (5 5 12) with native oxide, HF-treated, and reconstructed surfaces, respectively. The crystalline quality of Ag nanostructures on HF-treated substrate was found to improve at higher substrate temperatures during growth.

Original language	English
Article number	356
Journal	Applied Physics A: Materials Science and Processing
Volume	122
Issue number	4
DOIs	https://doi.org/10.1007/s00339-016-9929-6
State	Published - 1 Apr 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016, Springer-Verlag Berlin Heidelberg.

Funding

Parlapalli Venkata Satyam (PVS) acknowledges the financial support from the Department of Atomic Energy, Government of India, for 11th Plan Project No. 11-R&D-IOP-5.09-0100 and 12th Plan Project No. 12-R&D-IOP-5.09-0100. PVS acknowledges the technical help in of Dr. Avijit Kumar, Department of Applied Physics, Aalto University School of Science, Aalto, Finland, for setting up the UHV-STM.

Funders	Funder number
Department of Atomic Energy, Government of India	12-R, 11-R, D-IOP-5.09-0100

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abstract = "High-index substrates, such as Si (5 5 12), provide self-assembled one-dimensional periodic array of structures upon reconstruction and can be used as templates for growth of aligned nanoscale structures. Crystalline quality of Ag nanostructures grown under UHV conditions using a molecular beam epitaxy system on reconstructed Si (5 5 12) surface is compared with those structures grown on HF-treated and native-oxide-covered Si (5 5 12) surfaces. These have been characterized by using reflection high-energy electron diffraction (RHEED), transmission electron microscopy (TEM) and in situ scanning tunneling microscopy methods. The RHEED and TEM studies confirm the polycrystalline, textured and crystalline nature of the Ag nanostructures grown on Si (5 5 12) with native oxide, HF-treated, and reconstructed surfaces, respectively. The crystalline quality of Ag nanostructures on HF-treated substrate was found to improve at higher substrate temperatures during growth.",

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AU - Maiti, Paramita

AU - Satyam, Parlapalli Venkata

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Growth of Ag nanostructures on high-index Si (5 5 12) surfaces under UHV conditions: effect of prior surface treatment before deposition

Abstract

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Funding

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