Growth and properties of Co-doped TiO 2 thin films grown on buffered Si substrate

Hyuck Soo Yang; Rajiv K. Singh

doi:10.1063/1.1651799

Growth and properties of Co-doped TiO ₂ thin films grown on buffered Si substrate

Hyuck Soo Yang
, Rajiv K. Singh

University of Florida

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The SrTiO ₃/TiN bilayers were used as a buffer for the epitaxial growth of Co-doped anatase TiO ₂ thin films on silicon. The layers were sequentially formed by pulsed laser deposition and ferromagnetism was observed at room temperature with a coercivity of 607 Oe. High-quality epitaxy of films on the silicon was demonstrated by x-ray diffraction and transmission electron microscopy. The results show that the ferromagnetism is due to the highly cobalt enriched TiO ₂ clusters which nucleate after a certain growth of film.

Original language	English
Pages (from-to)	7192-7194
Number of pages	3
Journal	Journal of Applied Physics
Volume	95
Issue number	11 II
DOIs	https://doi.org/10.1063/1.1651799
State	Published - 1 Jun 2004
Externally published	Yes

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abstract = "The SrTiO 3/TiN bilayers were used as a buffer for the epitaxial growth of Co-doped anatase TiO 2 thin films on silicon. The layers were sequentially formed by pulsed laser deposition and ferromagnetism was observed at room temperature with a coercivity of 607 Oe. High-quality epitaxy of films on the silicon was demonstrated by x-ray diffraction and transmission electron microscopy. The results show that the ferromagnetism is due to the highly cobalt enriched TiO 2 clusters which nucleate after a certain growth of film.",

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N2 - The SrTiO 3/TiN bilayers were used as a buffer for the epitaxial growth of Co-doped anatase TiO 2 thin films on silicon. The layers were sequentially formed by pulsed laser deposition and ferromagnetism was observed at room temperature with a coercivity of 607 Oe. High-quality epitaxy of films on the silicon was demonstrated by x-ray diffraction and transmission electron microscopy. The results show that the ferromagnetism is due to the highly cobalt enriched TiO 2 clusters which nucleate after a certain growth of film.

AB - The SrTiO 3/TiN bilayers were used as a buffer for the epitaxial growth of Co-doped anatase TiO 2 thin films on silicon. The layers were sequentially formed by pulsed laser deposition and ferromagnetism was observed at room temperature with a coercivity of 607 Oe. High-quality epitaxy of films on the silicon was demonstrated by x-ray diffraction and transmission electron microscopy. The results show that the ferromagnetism is due to the highly cobalt enriched TiO 2 clusters which nucleate after a certain growth of film.

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Growth and properties of Co-doped TiO ₂ thin films grown on buffered Si substrate

Abstract

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