Abstract
There are several important considerations in common in the growth of InP/InGaAs and InAs/GaSb superlattices. These include: the uniformity of the periodicity within the superlattice, the type of interfaces and their arrangement within the superlattice and the abruptness of those interfaces. The growth of InAs/GaSb superlattices by metallorganic vapor phase epitaxy is compared with published results on the growth of InGaAs/InP superlattices based on these important considerations.
| Original language | English |
|---|---|
| Pages (from-to) | 454-457 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| State | Published - 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials - Schwabisch Gmund, Ger Duration: 21 Apr 1996 → 25 Apr 1996 |