Growth and application of group III - antimonides by MOVPE

P. C. Klipstein; M. Lakrimi; S. Lyapin; N. J. Mason; R. J. Nicholas; P. J. Walker

Growth and application of group III - antimonides by MOVPE

P. C. Klipstein
, M. Lakrimi
, S. Lyapin
, N. J. Mason
, R. J. Nicholas
, P. J. Walker

University of Oxford

Research output: Contribution to journal › Conference article › peer-review

Abstract

There are several important considerations in common in the growth of InP/InGaAs and InAs/GaSb superlattices. These include: the uniformity of the periodicity within the superlattice, the type of interfaces and their arrangement within the superlattice and the abruptness of those interfaces. The growth of InAs/GaSb superlattices by metallorganic vapor phase epitaxy is compared with published results on the growth of InGaAs/InP superlattices based on these important considerations.

Original language	English
Pages (from-to)	454-457
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials - Schwabisch Gmund, Ger Duration: 21 Apr 1996 → 25 Apr 1996

Cite this

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title = "Growth and application of group III - antimonides by MOVPE",

abstract = "There are several important considerations in common in the growth of InP/InGaAs and InAs/GaSb superlattices. These include: the uniformity of the periodicity within the superlattice, the type of interfaces and their arrangement within the superlattice and the abruptness of those interfaces. The growth of InAs/GaSb superlattices by metallorganic vapor phase epitaxy is compared with published results on the growth of InGaAs/InP superlattices based on these important considerations.",

author = "Klipstein, \{P. C.\} and M. Lakrimi and S. Lyapin and Mason, \{N. J.\} and Nicholas, \{R. J.\} and Walker, \{P. J.\}",

year = "1996",

language = "אנגלית",

pages = "454--457",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials ; Conference date: 21-04-1996 Through 25-04-1996",

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T1 - Growth and application of group III - antimonides by MOVPE

AU - Klipstein, P. C.

AU - Lakrimi, M.

AU - Lyapin, S.

AU - Mason, N. J.

AU - Nicholas, R. J.

AU - Walker, P. J.

PY - 1996

Y1 - 1996

N2 - There are several important considerations in common in the growth of InP/InGaAs and InAs/GaSb superlattices. These include: the uniformity of the periodicity within the superlattice, the type of interfaces and their arrangement within the superlattice and the abruptness of those interfaces. The growth of InAs/GaSb superlattices by metallorganic vapor phase epitaxy is compared with published results on the growth of InGaAs/InP superlattices based on these important considerations.

AB - There are several important considerations in common in the growth of InP/InGaAs and InAs/GaSb superlattices. These include: the uniformity of the periodicity within the superlattice, the type of interfaces and their arrangement within the superlattice and the abruptness of those interfaces. The growth of InAs/GaSb superlattices by metallorganic vapor phase epitaxy is compared with published results on the growth of InGaAs/InP superlattices based on these important considerations.

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AN - SCOPUS:0029716357

SN - 1092-8669

SP - 454

EP - 457

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials

Y2 - 21 April 1996 through 25 April 1996

ER -

Growth and application of group III - antimonides by MOVPE

Abstract

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