TY - JOUR
T1 - Graphite in the bilayer regime
T2 - In-plane transport
AU - Gutman, D. B.
AU - Tongay, S.
AU - Pal, H. K.
AU - Maslov, D. L.
AU - Hebard, A. F.
PY - 2009/8/6
Y1 - 2009/8/6
N2 - An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, ρab, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in ρab in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphenelike optical phonons.
AB - An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, ρab, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in ρab in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphenelike optical phonons.
UR - http://www.scopus.com/inward/record.url?scp=69949188904&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.80.045418
DO - 10.1103/PhysRevB.80.045418
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AN - SCOPUS:69949188904
SN - 1098-0121
VL - 80
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 4
M1 - 045418
ER -