Graphite in the bilayer regime: In-plane transport

D. B. Gutman, S. Tongay, H. K. Pal, D. L. Maslov, A. F. Hebard

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, ρab, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in ρab in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphenelike optical phonons.

Original languageEnglish
Article number045418
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume80
Issue number4
DOIs
StatePublished - 6 Aug 2009
Externally publishedYes

Funding

FundersFunder number
National Science Foundation
Directorate for Mathematical and Physical Sciences0704240

    Fingerprint

    Dive into the research topics of 'Graphite in the bilayer regime: In-plane transport'. Together they form a unique fingerprint.

    Cite this