Graphite in the bilayer regime: In-plane transport

D. Gutman; S Tongay; HK Pal; DL Maslov; AF Hebard

Graphite in the bilayer regime: In-plane transport

D. Gutman, S Tongay, HK Pal, DL Maslov, AF Hebard

Department of Physics - at Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

Abstract

An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, ρab, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in ρab in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphenelike optical phonons.

Original language	American English
Journal	Physical Review B (Condensed Matter and Materials Physics)
Volume	80
Issue number	4
State	Published - 2009

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title = "Graphite in the bilayer regime: In-plane transport",

abstract = "An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, ρab, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in ρab in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphenelike optical phonons.",

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year = "2009",

language = "American English",

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journal = "Physical Review B (Condensed Matter and Materials Physics)",

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TY - JOUR

T1 - Graphite in the bilayer regime: In-plane transport

AU - Gutman, D.

AU - Tongay, S

AU - Pal, HK

AU - Maslov, DL

AU - Hebard, AF

PY - 2009

Y1 - 2009

N2 - An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, ρab, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in ρab in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphenelike optical phonons.

AB - An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, ρab, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in ρab in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphenelike optical phonons.

M3 - Article

VL - 80

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

IS - 4

ER -

Graphite in the bilayer regime: In-plane transport

Abstract

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