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Grain boundary diffusion of Si in polycrystalline copper film
Eszter Bodnár
, Viktor Takáts
, Tamás Fodor
, József Hakl
,
Yuri Kaganovskii
, Guang Yang
, Xiaogang Yao
, Kálmán Vad
Department of Physics - at Bar-Ilan University
Institute for Nuclear Research
Shanghai University
CAS - Shanghai Institute of Ceramics
Research output
:
Contribution to journal
›
Article
›
peer-review
2
Scopus citations
Overview
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Keyphrases
Grain Boundary Diffusion
100%
Polycrystalline Copper
100%
Copper Film
100%
Cu Film
75%
Polycrystalline Cu
50%
Scanning Tunneling Microscopy
25%
Room Temperature
25%
High Sensitivity
25%
X-ray Photoelectron Spectroscopy
25%
Diffusion Coefficient
25%
Surface Layer
25%
Diffusion Path
25%
Temperature Range
25%
Grain Boundary
25%
Amorphous Si
25%
Wafer
25%
Surface Segregation
25%
Surface Morphology
25%
Film Surface
25%
Chemical Bond
25%
Depth Distribution
25%
Film Thickness
25%
Si(111)
25%
Cu Surface
25%
Copper Surface
25%
Si Layer
25%
C-type
25%
Kinetic Regime
25%
Interatomic Bonds
25%
Cu Layer
25%
Low Energy Ion Scattering Spectroscopy
25%
Copper Layer
25%
Magnetron Sputtering
25%
Secondary Neutral Mass Spectrometry
25%
Material Science
Film
100%
Grain Boundary
100%
X-Ray Photoelectron Spectroscopy
20%
Amorphous Material
20%
Diffusivity
20%
Film Thickness
20%
Surface Morphology
20%
Magnetron Sputtering
20%
Chemical Bonding
20%
Low-Energy Ion Scattering Spectroscopy
20%