Giant persistent photoconductivity induced crossover from strong to weak localization in Si-δ-doped GaAs compensated with Be acceptors

Keyphrases

• Gallium Arsenide 100%
• Weak Localization 100%
• Persistent Photoconductivity 100%
• Si-doped 100%
• High Dose 33%
• Low Temperature 33%
• Temperature Effect 33%
• Red Light 33%
• Electron Localization 33%
• Longitudinal Resistivity 33%
• Electron Transport 33%
• Hopping Mechanism 33%
• Variable Range Hopping 33%
• Two-dimensional Electrons 33%
• Electron Mobility 33%
• Exponential Increase 33%
• Temperature-dependent Thermal Conductivity 33%
• Localized Electrons 33%
• Conductivity Change 33%
• Illumination Parameter 33%
• Logarithmic Law 33%

Material Science

• Gallium Arsenide 100%
• Photoconductivity 100%
• Electron Transfer 33%
• Electrical Resistivity 33%
• Electron Mobility 33%

Physics

• Photoconductivity 100%
• Temperature Dependence 66%
• Electron Mobility 33%