Giant persistent photoconductivity induced crossover from strong to weak localization in Si-δ-doped GaAs compensated with Be acceptors

K. J. Friedland; M. Hoerike; R. Hey; I. Shlimak; L. Resnick

doi:10.1016/S0378-4371(01)00456-3

Giant persistent photoconductivity induced crossover from strong to weak localization in Si-δ-doped GaAs compensated with Be acceptors

K. J. Friedland, M. Hoerike, R. Hey, I. Shlimak, L. Resnick

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

We present the results of measurements of two-dimensional electron transport in Si-δ-doped GaAs samples compensated with Be acceptors. It is shown that the temperature dependence of longitudinal resistivity R_xx in the interval 1 K-100 mK is well described by the variable-range-hopping mechanism R_xx(T) = R₀ exp[(T₀/T)^1/2] peculiar for strongly localized electrons. Transitional illumination of these samples by a red light causes a persistent photoconductivity (PPC), which is fully determined by irreversible increase of electron mobility. As a result of illumination, parameter T₀ decreases which leads to a giant exponential increase of PPC at low temperatures. After high dose of illumination, the temperature dependence of conductivity changes from exponential to logarithmic law, which can be considered as a crossover from strong to weak electron localization.

Original language	English
Pages (from-to)	375-381
Number of pages	7
Journal	Physica A: Statistical Mechanics and its Applications
Volume	302
Issue number	1-4
DOIs	https://doi.org/10.1016/S0378-4371(01)00456-3
State	Published - 15 Dec 2001
Event	International Workshop on Frontiers in the Physics of Complex Systems - Ramat-Gan, Israel Duration: 25 Mar 2001 → 28 Mar 2001

Bibliographical note

Funding Information:
I.S. and L.R. are thankful to the Erick and Sheila Samson Chair of Semiconductor Technology for financial support.

Keywords

Localisation
Magnetotransport
Two-dimensional electrons

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10.1016/S0378-4371(01)00456-3

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title = "Giant persistent photoconductivity induced crossover from strong to weak localization in Si-δ-doped GaAs compensated with Be acceptors",

abstract = "We present the results of measurements of two-dimensional electron transport in Si-δ-doped GaAs samples compensated with Be acceptors. It is shown that the temperature dependence of longitudinal resistivity Rxx in the interval 1 K-100 mK is well described by the variable-range-hopping mechanism Rxx(T) = R0 exp[(T0/T)1/2] peculiar for strongly localized electrons. Transitional illumination of these samples by a red light causes a persistent photoconductivity (PPC), which is fully determined by irreversible increase of electron mobility. As a result of illumination, parameter T0 decreases which leads to a giant exponential increase of PPC at low temperatures. After high dose of illumination, the temperature dependence of conductivity changes from exponential to logarithmic law, which can be considered as a crossover from strong to weak electron localization.",

keywords = "Localisation, Magnetotransport, Two-dimensional electrons",

author = "Friedland, {K. J.} and M. Hoerike and R. Hey and I. Shlimak and L. Resnick",

note = "Funding Information: I.S. and L.R. are thankful to the Erick and Sheila Samson Chair of Semiconductor Technology for financial support. ; International Workshop on Frontiers in the Physics of Complex Systems ; Conference date: 25-03-2001 Through 28-03-2001",

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T1 - Giant persistent photoconductivity induced crossover from strong to weak localization in Si-δ-doped GaAs compensated with Be acceptors

AU - Friedland, K. J.

AU - Hoerike, M.

AU - Hey, R.

AU - Shlimak, I.

AU - Resnick, L.

N1 - Funding Information: I.S. and L.R. are thankful to the Erick and Sheila Samson Chair of Semiconductor Technology for financial support.

PY - 2001/12/15

Y1 - 2001/12/15

N2 - We present the results of measurements of two-dimensional electron transport in Si-δ-doped GaAs samples compensated with Be acceptors. It is shown that the temperature dependence of longitudinal resistivity Rxx in the interval 1 K-100 mK is well described by the variable-range-hopping mechanism Rxx(T) = R0 exp[(T0/T)1/2] peculiar for strongly localized electrons. Transitional illumination of these samples by a red light causes a persistent photoconductivity (PPC), which is fully determined by irreversible increase of electron mobility. As a result of illumination, parameter T0 decreases which leads to a giant exponential increase of PPC at low temperatures. After high dose of illumination, the temperature dependence of conductivity changes from exponential to logarithmic law, which can be considered as a crossover from strong to weak electron localization.

AB - We present the results of measurements of two-dimensional electron transport in Si-δ-doped GaAs samples compensated with Be acceptors. It is shown that the temperature dependence of longitudinal resistivity Rxx in the interval 1 K-100 mK is well described by the variable-range-hopping mechanism Rxx(T) = R0 exp[(T0/T)1/2] peculiar for strongly localized electrons. Transitional illumination of these samples by a red light causes a persistent photoconductivity (PPC), which is fully determined by irreversible increase of electron mobility. As a result of illumination, parameter T0 decreases which leads to a giant exponential increase of PPC at low temperatures. After high dose of illumination, the temperature dependence of conductivity changes from exponential to logarithmic law, which can be considered as a crossover from strong to weak electron localization.

KW - Localisation

KW - Magnetotransport

KW - Two-dimensional electrons

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T2 - International Workshop on Frontiers in the Physics of Complex Systems

Y2 - 25 March 2001 through 28 March 2001

ER -

Giant persistent photoconductivity induced crossover from strong to weak localization in Si-δ-doped GaAs compensated with Be acceptors

Abstract

Bibliographical note

Keywords

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