Giant electrostriction in Gd-doped ceria

Roman Korobko; Anitha Patlolla; Anna Kossoy; Ellen Wachtel; Harry L. Tuller; Anatoly I. Frenkel; Igor Lubomirsky

doi:10.1002/adma.201202270

Giant electrostriction in Gd-doped ceria

Roman Korobko, Anitha Patlolla, Anna Kossoy, Ellen Wachtel, Harry L. Tuller, Anatoly I. Frenkel, Igor Lubomirsky

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101 Scopus citations

Abstract

Gd-doped CeO₂ exhibits an anomalously large electrostriction effect generating stress that can reach 500 MPa. In situ XANES measurements indicate that the stress develops in response to the rearrangement of cerium-oxygen vacancy pairs. This mechanism is fundamentally different from that of materials currently in use and suggests that Gd-doped ceria is a representative of a new family of high-performance electromechanical materials.

Original language	English
Pages (from-to)	5857-5861
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	43
DOIs	https://doi.org/10.1002/adma.201202270
State	Published - 14 Nov 2012
Externally published	Yes

Keywords

XANES
doped ceria
electrostriction
point defects

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10.1002/adma.201202270

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AU - Lubomirsky, Igor

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KW - point defects

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Giant electrostriction in Gd-doped ceria

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Keywords

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